Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Tobias, Hadamek"'
Autor:
Tobias Hadamek, Agham B. Posadas, Fatima Al-Quaiti, David J. Smith, Martha R. McCartney, Alexander A. Demkov
Publikováno v:
AIP Advances, Vol 11, Iss 4, Pp 045209-045209-10 (2021)
β-Ga2O3 was deposited in thin film form by plasma-assisted molecular beam epitaxy at 670 °C and 630 °C onto a γ-Al2O3 (111) buffer layer grown at 840 °C by e-beam evaporation on a clean Si (001) surface. The β-Ga2O3 film was 66 nm thick, stoich
Externí odkaz:
https://doaj.org/article/4d697671512d4137943f18e3fc5714d3
Autor:
Jaehyuk Park, Tobias Hadamek, Agham B. Posadas, Euijun Cha, Alexander A. Demkov, Hyunsang Hwang
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by
Externí odkaz:
https://doaj.org/article/2d115af51862416889643806af10ea45
Autor:
Tobias Hadamek, Agham B. Posadas, Fatima Al-Quaiti, David J. Smith, Martha R. McCartney, Eric Dombrowski, Alexander A. Demkov
Publikováno v:
Journal of Applied Physics. 131:145702
Thin Ga2O3 films were deposited by plasma-assisted molecular beam epitaxy on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates. Examination using reflection-high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00d9e7771deb18b3e67b8457dab88ff3
https://doi.org/10.1063/5.0082859
https://doi.org/10.1063/5.0082859
Publikováno v:
Physical Review Materials. 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c13d20c8514cf714d8fc4685d7565d
https://doi.org/10.1103/physrevmaterials.3.044607
https://doi.org/10.1103/physrevmaterials.3.044607
Autor:
David J. Smith, Alexander A. Demkov, Agham Posadas, Martha R. McCartney, Fatima Al-Quaiti, Tobias Hadamek
Publikováno v:
AIP Advances, Vol 11, Iss 4, Pp 045209-045209-10 (2021)
β-Ga2O3 was deposited in thin film form by plasma-assisted molecular beam epitaxy at 670 °C and 630 °C onto a γ-Al2O3 (111) buffer layer grown at 840 °C by e-beam evaporation on a clean Si (001) surface. The β-Ga2O3 film was 66 nm thick, stoich
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11c6806d2a76962480acaedc3b3ffd28
https://doi.org/10.1063/5.0044923
https://doi.org/10.1063/5.0044923
Publikováno v:
Surface Science. 705:121763
Effects of localized Eu 4f levels on the band gap properties of Eu2O3 have attracted significant fundamental and technological interest, and the band structure of such thin films has been thoroughly studied by photoelectron spectroscopies (T. Hadamek
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1bc285b0425c1ec49108e8bac11aa79
https://doi.org/10.1016/j.susc.2020.121763
https://doi.org/10.1016/j.susc.2020.121763
Autor:
Tobias Hadamek, Sylvie Rangan, Jonathan Viereck, Agham Posadas, Alexander A. Demkov, Donghan Shin, Robert Bartynski
Publikováno v:
Journal of Applied Physics. 127:074101
The electronic structure of Eu sesquioxide (Eu2O3) presents a significant challenge to the electronic structure theory due to the presence of correlated Eu semicore 4f electrons. The bandgap values do not agree between computational methods, and even
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::565af8d70c5859c07d1cde2ab011f26a
https://doi.org/10.1063/1.5139227
https://doi.org/10.1063/1.5139227
Autor:
Alexander A. Demkov, Moon J. Kim, Tobias Hadamek, Pei-Yu Chen, Fatima Al-Quaiti, John G. Ekerdt, Agham Posadas, Sunah Kwon
Publikováno v:
Journal of Vacuum Science & Technology A. 38:012403
La2O3 has been reported as a good gate dielectric for GaN-based high electron mobility transistor and metal-oxide-semiconductor field effect transistor applications. In this study, atomic layer deposition (ALD) was selected as the deposition techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::171c92a925954c13e53385b891e363f5
https://doi.org/10.1116/1.5131638
https://doi.org/10.1116/1.5131638
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8f49669354d5a7a0b7f988ecba5a2eb
https://doi.org/10.1038/s41598-017-04529-4
https://doi.org/10.1038/s41598-017-04529-4
Autor:
Jaehyuk, Park, Tobias, Hadamek, Agham B, Posadas, Euijun, Cha, Alexander A, Demkov, Hyunsang, Hwang
Publikováno v:
Scientific Reports
NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0279a22f8e6aa30869090702b3bd41ce
https://pubmed.ncbi.nlm.nih.gov/28642471
https://pubmed.ncbi.nlm.nih.gov/28642471