Thermally stimulated current method applied to highly irradiated silicon diodes

Autor: Pintilie, I, Tivarus, C, Pintilie, L, Moll, M, Fretwurst, E ^*, Lindstroem, G

Publikováno v: In Nuclear Inst. and Methods in Physics Research, A 2002 476(3):652-657

Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

Autor: Lindström, G ^*, Ahmed, M, Albergo, S, Allport, P, Anderson, D, Andricek, L, Angarano, M.M, Augelli, V, Bacchetta, N, Bartalini, P, Bates, R, Biggeri, U, Bilei, G.M, Bisello, D, Boemi, D, Borchi, E, Botila, T, Brodbeck, T.J, Bruzzi, M, Budzynski, T, Burger, P, Campabadal, F, Casse, G, Catacchini, E, Chilingarov, A, Ciampolini, P, Cindro, V, Costa, M.J, Creanza, D, Clauws, P, Da Via, C, Davies, G, De Boer, W, Dell’Orso, R, De Palma, M, Dezillie, B, Eremin, V, Evrard, O, Fallica, G, Fanourakis, G, Feick, H, Focardi, E, Fonseca, L, Fretwurst, E, Fuster, J, Gabathuler, K, Glaser, M, Grabiec, P, Grigoriev, E, Hall, G, Hanlon, M, Hauler, F, Heising, S, Holmes-Siedle, A, Horisberger, R, Hughes, G, Huhtinen, M, Ilyashenko, I, Ivanov, A, Jones, B.K, Jungermann, L, Kaminsky, A, Kohout, Z, Kramberger, G, Kuhnke, M, Kwan, S, Lemeilleur, F, Leroy, C, Letheren, M, Li, Z, Ligonzo, T, Linhart, V, Litovchenko, P, Loukas, D, Lozano, M, Luczynski, Z, Lutz, G, MacEvoy, B, Manolopoulos, S, Markou, A, Martinez, C, Messineo, A, Mikuž, M, Moll, M, Nossarzewska, E, Ottaviani, G, Oshea, V, Parrini, G, Passeri, D, Petre, D, Pickford, A, Pintilie, I, Pintilie, L, Pospisil, S, Potenza, R, Raine, C, Rafi, J.M, Ratoff, P.N, Richter, R.H, Riedler, P, Roe, S, Roy, P, Ruzin, A, Ryazanov, A.I, Santocchia, A, Schiavulli, L, Sicho, P, Siotis, I, Sloan, T, Slysz, W, Smith, K, Solanky, M, Sopko, B, Stolze, K, Sundby Avset, B, Svensson, B, Tivarus, C, Tonelli, G, Tricomi, A, Tzamarias, S, Valvo, G, Vasilescu, A, Vayaki, A, Verbitskaya, E, Verdini, P, Vrba, V, Watts, S, Weber, E.R, Wegrzecki, M, Wegrzecka, I, Weilhammer, P, Wheadon, R, Wilburn, C, Wilhelm, I, Wunstorf, R, Wüstenfeld, J, Wyss, J, Zankel, K, Zabierowski, P, Žontar, D

Publikováno v: In Nuclear Inst. and Methods in Physics Research, A 2001 466(2):308-326

Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p–n Si junctions using optical charging spectroscopy

Autor: Pintilie, I. ^*, Tivarus, C., Botila, T., Petre, D., Pintilie, L.

Publikováno v: In Nuclear Inst. and Methods in Physics Research, A 2000 439(2):221-227

Comparison of mixed anion, InAsyP1-y and mixed cation, InxAl1-xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates.

Autor: Hudait, M. K., Lin, Y., Palmisiano, M. N., Tivarus, C., Pelz, J. P., Ringel, S. A.

Publikováno v: Journal of Applied Physics; 4/15/2004, Vol. 95 Issue 8, p3952-3960, 9p, 2 Black and White Photographs, 1 Diagram, 7 Graphs

High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy

Autor: Hudait, M K, Lin, Y, Wilt, D M, Speck, J S, Tivarus, C A, Heller, E R, Pelz, J P, Ringel, S A

Publikováno v: Hudait, M K; Lin, Y; Wilt, D M; Speck, J S; Tivarus, C A; Heller, E R; et al.(2003). High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy. Applied Physics Letters, 82(19), 3212-3214. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/6327m3jq

Relaxed, high-quality, compositionally step-graded InAsyP1-y layers with an As composition of y=0.4, corresponding to a lattice mismatch of similar to1.3% were grown on InP substrates using solid-source molecular-beam epitaxy. Each layer was found to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::3795a8a7bf3f9a2c88efc42541bc9db1
http://www.escholarship.org/uc/item/6327m3jq