Výsledky vyhledávání - "Tito Chowdhury"

Propagation of APC models across product boundaries

Autor: Mark Freeland, Geethakrishnan Narasimhan, Ole Krogh, Gayathri Raghavendra, Tito Chowdhury

Publikováno v: SPIE Proceedings.

The BCT solution is an automatic correction for systematic offset built into the PCS product based on calibration from 2-5 wafers. This paper explores the validity of a predictive model for process control for use by manufacturers of semiconductor de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::238d192b39f931e2de333516ccc27558
https://doi.org/10.1117/12.536454

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Line-edge roughness reduction for advanced metal gate etch with 193-nm lithography in a silicon decoupled plasma source etcher (DPSII)

Autor: Hean-Cheal Lee, Jinhan Choi, Hanna Bamnolker, Chan-Lon Yang, Roni Khen, Yan Du, Shashank C. Deshmukh, Meihua Shen, Tito Chowdhury

Publikováno v: Advances in Resist Technology and Processing XX.

193nm lithography has become increasingly important as the critical dimensions of semiconductor devices continue to scale down towards sub 0.10um dimension. From dry etching perspective, however, 193nm resist brings new challenges due to its poorer p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::90975c3a7996acfd884fd8043d370490
https://doi.org/10.1117/12.485151

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Gate etch process control

Autor: Ron Mori, Ole Krogh, Mark Freeland, Tito Chowdhury

Publikováno v: SPIE Proceedings.

Studies on photomask Cr and MoSi etch processes were carried out and etch kinetics and modeling were performed. The photomasks were etched using an AMAT Centura II DPS and compared with a Unaxis VLE 770 ICP etcher. Mask metrology to support theoretic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8b09c52df11d1c4730147b7541305bb8
https://doi.org/10.1117/12.483671

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