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pro vyhledávání: '"Tirumaladass, Virinchi"'
Publikováno v:
In Materials Today: Proceedings 2021 46 Part 10:4962-4970
Autor:
Tirumaladass, Virinchi
Gate-all-around (GAA) nanosheet field effect transistors (NSFETs) seem to be one of the most promising replacement options for FinFETs towards scaling down below to the sub-7nm technology nodes. They offer better electrostatics and control of short c
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-321354
Autor:
Tirumaladass, Virinchi
Gate-all-around (GAA) nanosheet field effect transistors (NSFETs) seem to be one of the most promising replacement options for FinFETs towards scaling down below to the sub-7nm technology nodes. They offer better electrostatics and control of short c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______260::43b9937bc2ef551634085db62561c4f7
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-321354
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-321354