Resistance switching in HfO 2-based OxRRAM devices

Autor: Calka, P., Martinez, E., Lafond, D., Dansas, H., Tirano, S., Jousseaume, V., Bertin, F., Guedj, C.

Publikováno v: In Microelectronic Engineering 2011 88(7):1140-1142

Comparative study of non-polar switching behaviors of NiO- and HfO 2-based oxide resistive-RAMs

Autor: Jousseaume, V., Fantini, A., Nodin, J.F., Guedj, C., Persico, A., Buckley, J., Tirano, S., Lorenzi, P., Vignon, R., Feldis, H., Minoret, S., Grampeix, H., Roule, A., Favier, S., Martinez, E., Calka, P., Rochat, N., Auvert, G., Barnes, J.P., Gonon, P., Vallée, C., Perniola, L., De Salvo, B.

Publikováno v: In Solid State Electronics 2011 58(1):62-67

Comparative study of non-polar switching behaviors of NiO- and HfO2-based Oxide Resistive-RAMs.

Autor: Jousseaume, V., Fantini, A., Nodin, J.F., Guedj, C., Persico, A., Buckley, J., Tirano, S., Lorenzi, P., Vignon, R., Feldis, H., Minoret, S., Grampeix, H., Roule, A., Favier, S., Martinez, E., Calka, P., Rochat, N., Auvert, G., Barnes, J.P., Gonon, P.

Publikováno v: 2010 IEEE International Memory Workshop (IMW); 2010, p1-4, 4p

On the electrical variability of resistive-switching memory devices based on NiO oxide

Autor: Tirano, S., Marc Bocquet, Christophe Muller, Damien Deleruyelle, Perniola, L., Jousseaume, V., Salvo, B., Reimbold, G.

Publikováno v: HAL
2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC)
2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), Dec 2011, Arlington, United States

International audience; Resistive-switching memories (so-called RRAM) are increasingly investigated since they gather low cost, high integration capabilities together with good performances [1]. RRAM memories based on transition metal oxide are promi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::44697c5ba085f70a52a22952b2c68dfb
https://hal.archives-ouvertes.fr/hal-01745633

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