Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Tipat Piyapatarakul"'
Autor:
Mitsuru Takenaka, Ziqiang Zhao, Chong Pei Ho, Takumi Fujigaki, Tipat Piyapatarakul, Yuto Miyatake, Rui Tang, Kasidit Toprasertpong, Shinichi Takagi
Publikováno v:
ECS Transactions. 109:47-58
Since mid-infrared (MIR) wavelengths have a great potential for optical communication, sensing, and quantum information, Si-based MIR photonic integrated circuits (PICs) have been developed by leveraging Si photonics technology for near-infrared wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71fc56a9f901cff895eb9af6b37d36f0
https://doi.org/10.1149/10904.0047ecst
https://doi.org/10.1149/10904.0047ecst
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1008
We propose a III–V metal-oxide-semiconductor (MOS) optical modulator with a graphene gate electrode along with the analysis of the modulation properties. With p-type doped graphene used as a transparent gate electrode, we can fully utilize the elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0a637230883c2db3e40190ad14f6888
https://doi.org/10.35848/1347-4065/aca59c
https://doi.org/10.35848/1347-4065/aca59c
Autor:
Mitsuru Takenaka, Ziqiang Zhao, Chong Pei Ho, Takumi Fujigaki, Tipat Piyapatarakul, Yuto Miyatake, Rui Tang, Kasidit Toprasertpong, Shinichi Takagi
Publikováno v:
ECS Meeting Abstracts. :1175-1175
Since mid-infrared (MIR) wavelengths have a great potential for optical communication, sensing, and quantum information, Si-based MIR photonic integrated circuits (PICs) have been developed by leveraging Si photonics technology for near-infrared wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4d3ff5581951dc9f85be8c51cf6df39
https://doi.org/10.1149/ma2022-02321175mtgabs
https://doi.org/10.1149/ma2022-02321175mtgabs
Publikováno v:
Japanese Journal of Applied Physics. 61:SC1031
We propose an optical phase modulator with a hybrid metal-oxide-semiconductor (MOS) capacitor, consisting of single-layer graphene and III–V semiconductor waveguide. The proposed modulator is numerically analyzed in conjunction with the surface con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24d6a10cd81731c5815ec35f6fcea91c
https://doi.org/10.35848/1347-4065/ac4443
https://doi.org/10.35848/1347-4065/ac4443
Publikováno v:
Electronics Letters. 54:1399-1401
New high-quality thermoelectric devices with amorphous silicon/magnesium silicide (a-Si/Mg2Si)-stacked hetero-structure thin film layers have been fabricated using both radio frequency sputtering and rapid thermal annealing techniques. The thermoelec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61c8cffdb02e125f31c36c4c374dfc8e
https://doi.org/10.1049/el.2018.6352
https://doi.org/10.1049/el.2018.6352