Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Tino Zimmerling"'
Autor:
Kent R. Shirer, Kimberly A. Modic, Tino Zimmerling, Maja D. Bachmann, Markus König, Philip J. W. Moll, Leslie Schoop, Andrew P. Mackenzie
Publikováno v:
APL Materials, Vol 7, Iss 10, Pp 101116-101116-7 (2019)
A recent class of topological nodal-line semimetals with the general formula MSiX (M = Zr, Hf and X = S, Se, Te) has attracted much experimental and theoretical interest due to their properties, particularly their large magnetoresistances and high ca
Externí odkaz:
https://doaj.org/article/ea10c4e473524abb9f72f38f9e04e516
Publikováno v:
Nano letters. 22(10)
In this work, we combine two previously incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional electrostatic accumulation of charge carriers. The principal challenge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5be215d6db1e60d44b3bf9e3fa0e6339
https://pubmed.ncbi.nlm.nih.gov/35576585
https://pubmed.ncbi.nlm.nih.gov/35576585
In this work, we combine two previously-incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional electrostatic accumulation of charge carriers. The principal challenge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::008fff45b2c48235527485480eb2a460
Autor:
Markus König, Kimberly Modic, Philip J. W. Moll, Andrew P. Mackenzie, Kent Shirer, Leslie M. Schoop, Tino Zimmerling, Maja D. Bachmann
Publikováno v:
APL Materials
APL Materials, Vol 7, Iss 10, Pp 101116-101116-7 (2019)
APL Materials, Vol 7, Iss 10, Pp 101116-101116-7 (2019)
K.R.S., M.K., P.J.W.M., and A.P.M were supported by the Max-Planck-Society. P.J.W.M. acknowledges support by the Swiss National Science Foundation (Grant Nos. PP00P2_176789). M.D.B. acknowledges studentship funding from EPSRC under Grant No. EP/I0070
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::716453d306e701d38d63921b41a841cc
https://hdl.handle.net/21.11116/0000-000B-782D-D
https://hdl.handle.net/21.11116/0000-000B-782D-D
Publikováno v:
Applied Physics Letters. 108:063302
We investigate how excitonic processes in rubrene single crystals are affected by a deliberately implanted defect gradient induced by proton irradiation. Spatially resolved measurements show a gradually reduced photoluminescence quantum yield and tri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e03e1ebe1c9992dbf650a264902469cb
https://doi.org/10.1063/1.4941756
https://doi.org/10.1063/1.4941756
Publikováno v:
Physical Review B. 85
Rubrene single crystals have been irradiated with 1-MeV protons and helium ions at various fluence levels ($0.1\ifmmode\times\else\texttimes\fi{}{10}^{12}\ensuremath{-}5\ifmmode\times\else\texttimes\fi{}{10}^{12}$ particles/cm${}^{2}$), and the resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5b3f08c9031a6622e1e9b2f86a47b55
https://doi.org/10.1103/physrevb.85.134101
https://doi.org/10.1103/physrevb.85.134101
Autor:
Tino Zimmerling, Bertram Batlogg
Publikováno v:
Journal of Applied Physics. 115:164511
With progressively improving charge carrier mobility in organic semiconductors and miniaturization of organic field-effect transistors (OFETs), low contact resistances become ever more important. To study the capabilities of metal electrodes in OFETs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a1a6a875cb950fd9672036d0404d3f3
https://doi.org/10.1063/1.4873635
https://doi.org/10.1063/1.4873635
Autor:
Jean-Luc Reverchon, Jean-Yves Duboz, Andreas D. Wieck, Tino Zimmerling, Marguerite Laügt, David Schenk, Bernard Beaumont
Publikováno v:
Applied Physics Letters. 92:263501
The potential of GaN based materials for x-ray detection is investigated. The absorption coefficient in GaN is measured as a function of photon energy between 6 and 40keV. Metal-semiconductor-metal photodetectors are fabricated and characterized. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa6140e3cb1bdbcb7d5974b5aafb6cf0
https://doi.org/10.1063/1.2951619
https://doi.org/10.1063/1.2951619