Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Tino Hertzsch"'
Publikováno v:
32nd European Mask and Lithography Conference.
The patterning of the contact layer is modulated by strong etch effects that are highly dependent on the geometry of the contacts. Such litho-etch biases need to be corrected to ensure a good pattern fidelity. But aggressive designs contain complex s
Autor:
Alexander J. Blake, Zavkibek G. Tiljakov, Jürg Hulliger, Tino Hertzsch, Samat Talipov, Bakhtiyar T. Ibragimov, Fatkhulla Kh. Tadjimukhamedov
Publikováno v:
Journal of Inclusion Phenomena and Macrocyclic Chemistry. 59:287-292
Gossypol has been obtained in the zeolite-like form by desolvation of the 1:1 unstable solvate with dichloromethane. It demonstrates a high potential for an uptake of molecular iodine from the environment. In a case of single crystals a stable inclus
Autor:
Sean Durran, Matthias Ruhm, Eric Cotte, Rolf Seltmann, Agostino Cangiano, Tino Hertzsch, Eitan Hajaj, Daniel Fischer, Ronny Haupt, Tal Itzkovich, Carsten Hartig, Barak Bringoltz, Bernd Schulz, Boris Efraty, T. Shapoval
Publikováno v:
SPIE Proceedings.
In the current paper we are addressing three questions relevant for accuracy: 1. Which target design has the best performance and depicts the behavior of the actual device? 2. Which metrology signal characteristics could help to distinguish between t
Autor:
H. Bruchertseifer, Antonia Neels, Bernd Jaeckel, Tino Hertzsch, Salih Guentay, Claire Gervais, Jürg Hulliger
Publikováno v:
Advanced Functional Materials. 16:268-272
Application of ultrasound and ball milling produces micrometer-sized crystallites of tris-(o-phenylenedioxy)-cyclotriphosphazene (TPP) that show zeolite-like reversible sorption of I 2 and CH 3 I (methyl iodide). The thermal stability of open-pore TP
Publikováno v:
Microporous and Mesoporous Materials. 88:170-175
The sorption of nitrogen at 77 K and xenon at 298 K by the guest-free zeolite tris(o-phenylenedioxy)cyclotriphosphazene (TPP) was investigated. Xenon atoms show a remarkable affinity to the trigonal cavity of TPP by occupying about 90% of these sites
Publikováno v:
Angewandte Chemie. 114:2385-2388
Publikováno v:
Angewandte Chemie International Edition. 41:2281-2284
Publikováno v:
SPIE Proceedings.
According to the ITRS roadmap [1], the overlay requirement for the 28nm node is 8nm. If we compare this number with the performance given by tool vendors for their most advanced immersion systems (which is < 3nm), there seems to remain a large margin
Autor:
Christian Holfeld, Andre Holfeld, Guoxiang Ning, Tino Hertzsch, Daniel Fischer, Rolf Seltmann, Angeline Ho, Fang Hong Gn, Martin Sczyrba, Paul Ackmann, Karin Kurth
Publikováno v:
SPIE Proceedings.
Backside defects are out of focus during wafer exposure by the mask thickness and cannot be directly imaged on wafer. However, backside defects will induce transmission variation during wafer exposure. When the size of backside defect is larger than
Autor:
Andre Holfeld, Jens Busch, Rolf Seltmann, Francois Weisbuch, Gert Burbach, Anne Parge, Andre Poock, Tino Hertzsch
Publikováno v:
25th European Mask and Lithography Conference.
Within our paper we are going to discuss the variation within the patterning process in the context of the overall electrical parameter variation in an advanced logic Fab. The evaluation is based on both the variation of ring oscillators that are dis