Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Tingao Tang"'
Publikováno v:
IEEE Transactions on Electron Devices. 61:688-695
Analytical models for electric potential, threshold voltage, and subthreshold swing of the junctionless surrounding-gate field-effect transistors are presented. Poisson equation is solved and the electric potential is obtained. With the potential mod
Publikováno v:
IEEE Transactions on Electron Devices. 60:2410-2414
Based on McKelvey's flux theory, a carrier transport model for a graphene field-effect transistor (GFET) is addressed. This model leads to an explicit expression for drain-to-source current with only a few fitting parameters. The model is verified wi
Publikováno v:
Microelectronics Journal. 43:894-897
In this work, we investigate analytically quantum mechanical (QM) effects on the threshold voltage (V"T"H) shift of the surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We show how V"T"H is influenced by QM effects
Publikováno v:
Communications in Theoretical Physics. 58:171-174
In this paper, we study the effects of an unintended dopant in the channel on the current-voltage characteristics of a Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green's Function (NEGF) approach is us
Publikováno v:
Microelectronics Journal. 42:1164-1168
The threshold voltage, V"t"h of a double-gate (DG) Schottky-barrier (SB) source/drain (S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. An analytic expression for surface potential is obtained by using Gauss's la
Publikováno v:
IEEE Transactions on Electron Devices. 58:1830-1836
A unified carrier-transport model for a nanoscale surrounding-gate metal-oxide-semiconductor field-effect transistor (SG MOSFET) is developed. The model is based on McKelvey's flux theory and includes quantum-mechanical effects. The model is applicab
Publikováno v:
Microelectronics Journal. 42:515-519
An analytical model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Two-dimensional Poisson equation is solved analytically using series
Autor:
Hangbing Lv, Tingao Tang
Publikováno v:
Applied Physics A. 102:1015-1018
The CuxO films grown by plasma oxidation are composed of an insulating CuO layer and a conductive gradient CuxO layer. We found that the surface CuO layer influenced the switching behaviors greatly. Giant improvement of reliable endurance was achieve
Publikováno v:
Thin Solid Films. 518:5652-5655
In this work, the advances in the resistance switching characteristics of stoichiometric ZrO 2 thin films were studied. The Al/ZrO 2 /Al structure exhibits reliable and reproducible switching behaviours. The thickness dependence and electrode size ef
Publikováno v:
Integrated Ferroelectrics. 110:34-42
The multi-bit storage realization based on chalcogenide thin film transistor is put forward first here, in which the chalcogenide film acts as not only phase change material but also semiconductor layer. The channel length of thin film transistor was