Zobrazeno 1 - 10
of 123
pro vyhledávání: '"Ting-Wei Tang"'
Autor:
Pei-Hong Zhang, Xue-Jie Zhang, Ting-Wei Tang, Heng-Liang Hu, Ning-Ning Bai, Da-Wei Zhang, Shuan Meng, Jia-Shi Peng
Publikováno v:
Agronomy, Vol 12, Iss 12, p 2971 (2022)
Isolating the genes responsible for cadmium (Cd) accumulation and tolerance in oilseed rape and uncovering their functional mechanism is of great significance for guiding genetic improvement to cope with heavy metal pollution. In this study, we scree
Externí odkaz:
https://doaj.org/article/720b6215fbdf4b1ca4223e6328589b2c
Publikováno v:
AIP Advances, Vol 8, Iss 11, Pp 115105-115105-6 (2018)
We report the application of the discrete Wigner transport equation to the simulation of gate-all-around junctionless nanowire transistors (JLNWTs). We show that unphysical simulation results are obtained unless we pay attention to the accuracy balan
Externí odkaz:
https://doaj.org/article/ed3f3616d6e24fdf8228456e6210c3d0
Autor:
Tian-Long, Han, Ting-Wei, Tang, Pei-Hong, Zhang, Min, Liu, Jing, Zhao, Jia-Shi, Peng, Shuan, Meng
Publikováno v:
Genes. 13(12)
Zinc (Zn)-regulated and iron (Fe)-regulated transporter-like proteins (ZIP) are key players involved in the accumulation of cadmium (Cd) and Zn in plants.
Publikováno v:
Journal of Computational Electronics. 16:148-154
The Wigner transport equation based on the Wigner function which is defined on the phase space describes two actions in orthogonal directions of the phase space: movement (diffusion) in position space and transition in momentum space. Here, we show t
Publikováno v:
Journal of Applied Physics; 6/15/2004, Vol. 95 Issue 12, p7990-7997, 8p, 9 Graphs
Publikováno v:
Solid-State Electronics. 78:115-120
We present an expression for the saturated drain current in nanoscale transistors based on multiple reflections of carriers at the virtual source from two adjacent scattering “black boxes”. Under certain assumptions and simplifications this new e
Publikováno v:
AIP Advances, Vol 8, Iss 11, Pp 115105-115105-6 (2018)
We report the application of the discrete Wigner transport equation to the simulation of gate-all-around junctionless nanowire transistors (JLNWTs). We show that unphysical simulation results are obtained unless we pay attention to the accuracy balan
Autor:
Massimo V. Fischetti, Y. Taur, Mark J. W. Rodwell, Steven E. Laux, P. Asbeck, Ting-Wei Tang, Seonghoon Jin, Nobuyuki Sano
Publikováno v:
Journal of Computational Electronics. 8:60-77
In our attempts to scale FETs to the 10 nm length, alternatives to conventional Si CMOS are sought on the grounds that: (1) Si seems to have reached its technological and performance limits and (2) the use of alternative high-mobility channel materia
Publikováno v:
IEEE Transactions on Electron Devices. 55:2886-2897
We study electronic transport in silicon nanowire transistors at room temperature based on the self-consistent numerical solution of the multisubband Boltzmann transport equation and Poisson equation. The Schrodinger equation with nonparabolic correc