Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Ting-Tzu Kuo"'
Autor:
Chien-Hung Yeh, Ting-Chang Chang, Ting-Tzu Kuo, Wei-Chieh Hung, Jia-Hong Lin, Ya-Huan Lee, Wei-Ting Yen, Hung-Ming Kuo, Fong-Min Ciou, Kai-Chun Chang, Wei-Chun Hung
Publikováno v:
IEEE Electron Device Letters. 44:971-974
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96af84057300130e9e8b479a531d79b1
https://doi.org/10.1109/led.2023.3268220
https://doi.org/10.1109/led.2023.3268220
Autor:
Fu-Yuan Jin, Ting-Chang Chang, Chien-Yu Lin, Jih-Chien Liao, Fong-Min Ciou, Yu-Shan Lin, Wei-Chun Hung, Kai-Chun Chang, Yun-Hsuan Lin, Yen-Cheng Chang, Ting-Tzu Kuo
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 897-901 (2019)
This work performs fundamental electrical measurements and a positive bias temperature instability (PBTI) test on an N-type metal oxide semiconductor capacitor (MOSCAP) and a La2O3 dipole-doped N-type MOSCAP. Experimental results show that the dipole
Externí odkaz:
https://doaj.org/article/4047e49c404149afa37bbd7316f0ca15
Autor:
Hung-Ming Kuo, Ting-Chang Chang, Kai-Chun Chang, Hsin-Ni Lin, Ting-Tzu Kuo, Chien-Hung Yeh, Ya-Huan Lee, Jia-Hong Lin, Xin-Ying Tsai, Jen-Wei Huang, Simon Sze
Publikováno v:
IEEE Transactions on Electron Devices. 70:2216-2221
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9cf1de9a2ddad775944c6dfd572ca62
https://doi.org/10.1109/ted.2023.3255829
https://doi.org/10.1109/ted.2023.3255829
Autor:
Sheng-Yao Chou, Pei-Yu Wu, Ming-Chen Chen, Ting-Chang Chang, Xin-Ying Tsai, Shih-Kai Lin, Ting-Tzu Kuo, Wei-Chen Huang, Hong-Yi Tu, Chung-Wei Wu, Tsung-Ming Tsai, Jen-Wei Huang
Publikováno v:
IEEE Electron Device Letters. 44:213-216
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26a8148e9027d9dc06bf54ce523439bf
https://doi.org/10.1109/led.2022.3232610
https://doi.org/10.1109/led.2022.3232610
Autor:
Fu-Yuan Jin, Po-Hsun Chen, Wei-Chun Hung, Wei-Chieh Hung, Chin-Han Chang, Fong-Min Ciou, Yu-Shan Lin, Kai-Chun Chang, Yun-Hsuan Lin, Ting-Tzu Kuo, Kuan-Hsu Chen, Chien-Hung Yeh, Ting-Chang Chang
Publikováno v:
IEEE Transactions on Electron Devices. 70:191-195
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9093b155c857e2985473e563d971dab
https://doi.org/10.1109/ted.2022.3223645
https://doi.org/10.1109/ted.2022.3223645
Autor:
Jia-Hong Lin, Fong-Min Ciou, Ting-Chang Chang, Yu-Shan Lin, Jui-Tse Hsu, Fu-Yuan Jin, Kai-Chun Chang, Ting-Tzu Kuo, Kuan-Hsu Chen, Yang-Hao Hung, Yu-Zhe Zheng
Publikováno v:
IEEE Electron Device Letters. 43:1420-1423
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2abc480ffd2273db5072f6dee2f16e5
https://doi.org/10.1109/led.2022.3190541
https://doi.org/10.1109/led.2022.3190541
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1d68e5bc874d79655580749f31f3042
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10133962
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10133962
Publikováno v:
2023 35th International Conference on Microelectronic Test Structure (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9accbb096f192bc9497975bc1cf4fd44
https://doi.org/10.1109/icmts55420.2023.10094148
https://doi.org/10.1109/icmts55420.2023.10094148
Autor:
Ting-Tzu Kuo, Ying-Chung Chen, Ting-Chang Chang, Fong-Min Ciou, Chien-Hung Yeh, Po-Hsun Chen, Simon M Sze
Publikováno v:
2023 35th International Conference on Microelectronic Test Structure (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca870170e20cd04faa78c37b7139e869
https://doi.org/10.1109/icmts55420.2023.10094125
https://doi.org/10.1109/icmts55420.2023.10094125
Autor:
Wei-Chun Hung, Fu-Yuan Jin, Kai-Chun Chang, Yi-Han Ye, Cheng Tung Huang, Yu-Shan Lin, Chien-Hung Yeh, Ting-Tzu Kuo, Ting-Chang Chang, Fong-Min Ciou, Osbert Cheng, Jui-Tse Hsu, Po-Hsun Chen, Jia-Hong Lin
Publikováno v:
IEEE Electron Device Letters. 42:1420-1423
In this study, we fabricated an n- type fin field-effect transistor (FinFET) and a p- type FinFET (p-FinFET) to compare their hot carrier degradation (HCD) in 14-nm technology nodes. We analyzed the HCD under different gate voltages ( $\text{V}_{\tex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ade1bdd6ee2b6bb3e967836ea1c1c63
https://doi.org/10.1109/led.2021.3106540
https://doi.org/10.1109/led.2021.3106540