Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Ting-Kuo Kang"'
Autor:
Ting-Kuo Kang
Publikováno v:
Coatings, Vol 9, Iss 10, p 623 (2019)
Coatings
Volume 9
Issue 10
Coatings
Volume 9
Issue 10
A nylon thread (NT) resistive memory is fabricated by performing a simple dip-and-dry solution process using graphene&ndash
poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) conductive ink. The piezoresistive characteristics
poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) conductive ink. The piezoresistive characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdfbee186aeecb6aaab3b9d5e9536a4a
https://www.mdpi.com/2079-6412/9/10/623
https://www.mdpi.com/2079-6412/9/10/623
Evaluation of p-type polysilicon piezoresistance in a full-bridge circuit for surface stress sensors
Autor:
Ting-Kuo Kang
Publikováno v:
Measurement. 61:243-248
The evaluation of p-type polycrystalline silicon (polysilicon) piezoresistance in a full-bridge circuit is proposed for the application of surface stress sensors. With a simple four-point bending technique, the longitudinal and transverse gauge facto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8e70364b579aa26ec7a980cfae41bf1
https://doi.org/10.1016/j.measurement.2014.10.054
https://doi.org/10.1016/j.measurement.2014.10.054
Autor:
Ting-Kuo Kang
Publikováno v:
Solid-State Electronics. 91:24-27
An enhanced Seebeck coefficient ( S ) for a compressive n-type polysilicon film is proposed. An approximate value for S of 260 μV/K for a polysilicon film fabricated on a gate oxide (polyGOI) is greater than the value of 210 μV/K for a polysilicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dd020bd2a4406d3ba629a7671d01488
https://doi.org/10.1016/j.sse.2013.09.002
https://doi.org/10.1016/j.sse.2013.09.002
Autor:
Ting-Kuo Kang
Publikováno v:
Measurement. 44:871-874
A simple four-point-bending setup integrated with a foil strain gauge is presented for the direct measurement of mechanical stress (MS) on metal–oxide–semiconductor field-effect transistors (MOSFETs). The magnitude of the external MS applied to M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19d74c983b5f9f92e88a25fa5218c0e8
https://doi.org/10.1016/j.measurement.2011.02.019
https://doi.org/10.1016/j.measurement.2011.02.019
Publikováno v:
Microelectronics Reliability. 50:610-613
Process-induced strain dependence of impact ionization efficiency (IIE) in nMOSFETs with a tensile contact etch stop layer (CESL) is presented for the first time. From the universal relationship between the IIE and the electric field in the pinch-off
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::834f82b5ea713ca2fc28b95aae326266
https://doi.org/10.1016/j.microrel.2010.01.028
https://doi.org/10.1016/j.microrel.2010.01.028
Publikováno v:
Japanese Journal of Applied Physics. 47:2664-2667
In this study, we have systematically re-investigated impact ionization (II) characteristics in strained-Si n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs) with different strained-Si cap layers at two Ge contents. The stra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a721839bf95416f1e46636441956ce1
https://doi.org/10.1143/jjap.47.2664
https://doi.org/10.1143/jjap.47.2664
Publikováno v:
Japanese Journal of Applied Physics. 46:7639-7642
In this paper, we have proposed a comprehensive solution to the reliability monitoring (RM) of negative-bias temperature instability (NBTI), including the self-heating test structure, stress condition determination, and specification calculation. A s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fb1561e101eb6f6c3036d5b6f43d5e7
https://doi.org/10.1143/jjap.46.7639
https://doi.org/10.1143/jjap.46.7639
Autor:
Ting-Kuo Kang, San-Lein Wu
Publikováno v:
Japanese Journal of Applied Physics. 46:3193-3196
In this paper, we propose a method of analyzing electron tunneling components in the inversion mode of p+ poly-gate p-channel metal–oxide–semiconductor field-effect transistors from the direct tunneling (DT) region to the Fowler–Nordheim (FN) r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5295dbd11c074a80b7be8bcf070afcd
https://doi.org/10.1143/jjap.46.3193
https://doi.org/10.1143/jjap.46.3193
Autor:
Chung Yi Wu, San Lein Wu, Kuang Chih Huang, Chung Hsiung Lin, Shoou-Jinn Chang, Ting Kuo Kang
Publikováno v:
Japanese Journal of Applied Physics. 46:2882-2886
In this paper, we report the fabrication of a SiN-induced mechanically tensile-strained Si n-type metal–oxide–semiconductor field-effect transistor (nMOSFET) and a compressively strained SiGe p-type MOSFET to improve the drive current of both n-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::583ef087618e27b7bc26bc7a216d60a9
https://doi.org/10.1143/jjap.46.2882
https://doi.org/10.1143/jjap.46.2882
Publikováno v:
Japanese Journal of Applied Physics. 45:79-83
In this paper, we propose a comprehensive analysis of ultrathin oxide reliability that includes the validation of the power law model (TBD~V-n), area scaling (TBD~A-1/β), and process optimization. We show that the power law exponent n (=38) of a pFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86a6df1caf4b3d54d49170a0397acb6e
https://doi.org/10.1143/jjap.45.79
https://doi.org/10.1143/jjap.45.79