Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Ting-Hua Lu"'
Publikováno v:
Optics letters. 47(24)
Liquid crystals have been widely used in optoelectronic devices because of their fast response and excellent electro-optic properties. Featuring a unique ability to manipulate light, they are also proposed as a good candidate in topological photonics
Autor:
Wen-Hao, Chang, Chun-I, Lu, Tilo H, Yang, Shu-Ting, Yang, Kristan Bryan, Simbulan, Chih-Pin, Lin, Shang-Hsien, Hsieh, Jyun-Hong, Chen, Kai-Shin, Li, Chia-Hao, Chen, Tuo-Hung, Hou, Ting-Hua, Lu, Yann-Wen, Lan
Publikováno v:
Nanoscale horizons. 7(12)
The negative differential resistance (NDR) effect has been widely investigated for the development of various electronic devices. Apart from traditional semiconductor-based devices, two-dimensional (2D) transition metal dichalcogenide (TMD)-based fie
Autor:
Yi-Jie Feng, Kristan Bryan Simbulan, Tilo H. Yang, Ye-Ru Chen, Kai-Shin Li, Chia-Jung Chu, Ting-Hua Lu, Yann-Wen Lan
Publikováno v:
ACS nano. 16(6)
Light can possess orbital angular momentum (OAM), in addition to spin angular momentum (SAM), which offers nearly infinite possible values of momentum states, allowing a wider degree of freedom for information processing and communications. The OAM o
Publikováno v:
Nano Letters. 21:562-568
Miniaturized flat and ultrathin optical components with spatial and polarization degrees of freedom are important for optical communications. Here, we use nanostructures that act as tiny phase plates on a dielectric metalens to generate a concentric
Autor:
Rahul Kesarwani, Kristan Bryan Simbulan, Teng-De Huang, Yu-Fan Chiang, Nai-Chang Yeh, Yann-Wen Lan, Ting-Hua Lu
Publikováno v:
Science Advances. 8
Controlling the density of exciton and trion quasiparticles in monolayer two-dimensional (2D) materials at room temperature by nondestructive techniques is highly desired for the development of future optoelectronic devices. Here, the effects of diff
Autor:
Yu-Chen Chang, Bipul Das, Yu-Fan Chiang, Wen-Hao Chang, Yen-Chun Chen, Rahul Kesarwani, Wen-Cheng Ke, Yann-Wen Lan, Ting-Hua Lu
Publikováno v:
Applied Physics Letters. 122:032201
Displacement in the Raman shift of conventional Raman spectroscopy usually includes an increase in the number of material layers or a strain variation. To distinguish them, polarization-resolved Raman spectroscopy provides an additional degree of fre
Autor:
Shih-Po Chien, Yu-Chen Chang, Kristan Bryan Simbulan, Shantanu Saha, Yu-Fan Chiang, Rajendra K. Saroj, Gyu-Chul Yi, Shamsul Arafin, Ting-Hua Lu, Yann-Wen Lan
Publikováno v:
Applied Physics Letters. 121:182203
Due to its atomic thickness and insulating nature, hexagonal boron nitride (h-BN) is considered to be one of the most promising substrates and gate insulating materials for two-dimensional electronic devices. In this study, polarized Raman spectrosco
Autor:
Kristan Bryan, Simbulan, Teng-De, Huang, Guan-Hao, Peng, Feng, Li, Oscar Javier, Gomez Sanchez, Jhen-Dong, Lin, Chun-I, Lu, Chan-Shan, Yang, Junjie, Qi, Shun-Jen, Cheng, Ting-Hua, Lu, Yann-Wen, Lan
Publikováno v:
ACS nano. 15(2)
Twisted light carries a well-defined orbital angular momentum (OAM) of
Autor:
Shantanu Saha, Yu-Chen Chang, Tilo Hongwei Yang, Anthony Rice, Arnob Ghosh, Weicheng You, Mary Crawford, Ting-Hua Lu, Yann-Wen Lan, Shamsul Arafin
Publikováno v:
Nanotechnology. 33:215702
Two-dimensional hexagonal boron nitride (h-BN) materials have garnered increasing attention due to its ability of hosting intrinsic quantum point defects. This paper presents a photoluminescence (PL) mapping study related to sub-bandgap-level emissio