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Autor:
Pei-Wen Li, Wei-Ming Liao, Ching-Chieh Shih, Ming-Jinn Tsai, Tine-Shang Kuo, Li-Shyue Lai, Yang-Tai Tseng
Publikováno v:
IEEE Electron Device Letters. 24:454-456
We have investigated the effect of substrate biasing on the subthreshold characteristics and noise levels of Si/Si/sub 1-x/Ge/sub x/ (x=0,0.15,0.3) heterostructure MOSFETs. A detailed analysis of the dependence of threshold voltage, off-state current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24a74016a4217084abd54e92efa330f3
https://doi.org/10.1109/led.2003.814023
https://doi.org/10.1109/led.2003.814023
