Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Tine Uberg Nærland"'
Autor:
Jonathan Fagerström, Lisa Kvalbein, Janis Danebergs, Tine Uberg Nærland, Mari Øgaard, Kari Aamodt Espegren
Publikováno v:
Solar RRL. 6:2100461
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d65855fa7c54c083717790e9b43c0b8
https://doi.org/10.1002/solr.202100461
https://doi.org/10.1002/solr.202100461
Autor:
Lamine Sylla, Andreas Krause, Hui She, Earl C. Hixson, Joshua Russell, Nathan Stoddard, Franziska Wolny, Tine Uberg Nærland, Mariana I. Bertoni, Wilfried Von Ammon
Publikováno v:
Progress in Photovoltaics: Research and Applications. 26:324-331
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e87496c83250cf22e449b3cf32ba34d
https://doi.org/10.1002/pip.2984
https://doi.org/10.1002/pip.2984
Autor:
Andre Augusto, Mariana I. Bertoni, Simone Bernardini, Ethan Good, Nathan Stoddard, Tine Uberg Nærland
Publikováno v:
Energy Procedia. 124:138-145
In this work, we are showing that iron (Fe) related defects in mono-silicon have very different recombination characteristics depending on the doping element employed. While the defect characteristics of the Fe in its dissociated state is comparably
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f8bb70f0263411eff0d2bba32dc9a5e
https://doi.org/10.1016/j.egypro.2017.09.321
https://doi.org/10.1016/j.egypro.2017.09.321
Autor:
Mariana I. Bertoni, Steve Johnston, Simone Bernardini, Michael Stuckelberger, Bradley West, Barry Lai, Tine Uberg Nærland
Publikováno v:
IEEE Journal of Photovoltaics. 7:244-249
Metal impurities are known to hinder the performance of commercial Si-based solar cells by inducing bulk recombination, increasing leakage current, and causing direct shunting. Recently, a set of photoluminescence (PL) images of neighboring multicrys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::304599695dbb2f6b4e64c6edaa711d69
https://doi.org/10.1109/jphotov.2016.2621340
https://doi.org/10.1109/jphotov.2016.2621340
Autor:
Simone Bernardini, Adrienne L. Blum, Tine Uberg Nærland, Mariana I. Bertoni, Gianluca Coletti
Publikováno v:
Progress in Photovoltaics: Research and Applications. 25:209-217
The current trend in silicon photovoltaics moving towards high-quality thin mono-crystalline silicon substrates sets a new challenge for the understanding of recombination mechanisms limiting the final performance of solar cells. Temperature- and inj
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cc52c34e3dfc3497d0d0323b0f9326a
https://doi.org/10.1002/pip.2847
https://doi.org/10.1002/pip.2847
Autor:
Lamine Sylla, Ian T. Witting, Mariana I. Bertoni, Tine Uberg Nærland, Daniel Oriwol, Nathan Stoddard, Bianca Gründig-Wendrock, Andreas Krause
Publikováno v:
Journal of Crystal Growth. 452:272-275
Single crystal production of silicon for solar cell substrates has relied on the Dash neck technique developed more than 50 years ago. The technique is simple and repeatable and enables truly dislocation free crystal growth. It does have drawbacks, h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91f8c5928962e5077cfb15b33e9150c6
https://doi.org/10.1016/j.jcrysgro.2016.04.056
https://doi.org/10.1016/j.jcrysgro.2016.04.056
Autor:
Chaomin Zhang, Nikolai Faleev, Christiana B. Honsberg, Tine Uberg Nærland, Laura Ding, Mariana I. Bertoni
Publikováno v:
Energy Procedia. 92:617-623
A major hindrance to the development of devices integrating III-V materials on silicon, where it is an active component of the device, is the preservation of its electronic quality. In this contribution, we report on our effort to identify the mechan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4f69e7ab0529792a0b1a850d8908dc1
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 10:520-524
A demonstration that boron–oxygen related degradation in boron-doped Czochralski silicon could be caused by a single defect with two trap energy levels is presented. In this work, the same two-level defect can describe the fast and slow lifetime de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc435ad9944cf1d33644d1d18fd361fd
https://doi.org/10.1002/pssr.201600096
https://doi.org/10.1002/pssr.201600096
Autor:
Mariana I. Bertoni, Bradley West, Tine Uberg Nærland, Michael Stuckelberger, Barry Lai, Simone Bernardini, Steve Johnston
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a41294b8480f9387ae099ea6780a3a08
https://doi.org/10.1109/pvsc.2017.8366189
https://doi.org/10.1109/pvsc.2017.8366189
Autor:
Mariana I. Bertoni, Tine Uberg Nærland, Nathan Stoddard, Michael Stuckelberger, Pablo Guimera Coll
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Spalling is a promising kerfless method for cutting thin silicon wafers while doubling the yield of a silicon ingot. The main obstacle in this technology is the high total thickness variation of the spalled wafers, often as high as 100% of the wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68a18d7fda873ed679751483df29feb4
https://doi.org/10.1109/pvsc.2017.8366238
https://doi.org/10.1109/pvsc.2017.8366238