Zobrazeno 1 - 10
of 143
pro vyhledávání: '"Tin S. Cheng"'
Autor:
Oleg Makarovsky, Richard J. A. Hill, Tin S. Cheng, Alex Summerfield, Takeshi Taniguchi, Kenji Watanabe, Christopher J. Mellor, Amalia Patanè, Laurence Eaves, Sergei V. Novikov, Peter H. Beton
Publikováno v:
Communications Materials, Vol 5, Iss 1, Pp 1-6 (2024)
Abstract Graphene placed on hexagonal boron nitride (hBN) has received significant interest due to its excellent electrical performance and physics phenomena, such as superlattice Dirac points. Direct molecular beam epitaxy growth of graphene on hBN
Externí odkaz:
https://doaj.org/article/313606db9c814b759d7f0958af45188d
Autor:
Kohei Shima, Tin S. Cheng, Christopher J. Mellor, Peter H. Beton, Christine Elias, Pierre Valvin, Bernard Gil, Guillaume Cassabois, Sergei V. Novikov, Shigefusa F. Chichibu
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-8 (2024)
Abstract Cathodoluminescence (CL) spectroscopy is a suitable technique for studying the luminescent properties of optoelectronic materials because CL has no limitation on the excitable bandgap energy and eliminates ambiguous signals due to simple lig
Externí odkaz:
https://doaj.org/article/d9f906e2499b4a14b6b4e72c9ecf4f02
Autor:
Tin S. Cheng, Alex Summerfield, Christopher J. Mellor, Andrei N. Khlobystov, Laurence Eaves, C. Thomas Foxon, Peter H. Beton, Sergei V. Novikov
Publikováno v:
Materials, Vol 11, Iss 7, p 1119 (2018)
Hexagonal boron nitride (hBN) has attracted a great deal of attention as a key component in van der Waals (vdW) heterostructures, and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular be
Externí odkaz:
https://doaj.org/article/47e6c6e2d1154d3cb77ddf9743192e43
Autor:
Luiz Fernando Zagonel, Fábio J R Costa Costa, Guillaume Cassabois, Alex Summerfield, Christine Elias, Bernard Gil, Christopher J. Mellor, Pierre Valvin, Peter H. Beton, Ricardo Javier Peña Román, Sergei V. Novikov, Alberto Zobelli, Tin S. Cheng
Publikováno v:
2D Materials
2D Materials, IOP Publishing, 2021, 8 (4), pp.044001. ⟨10.1088/2053-1583/ac0d9c⟩
2D Materials, IOP Publishing, 2021, 8 (4), pp.044001. ⟨10.1088/2053-1583/ac0d9c⟩
Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7748793f8fdaf080caabf4fbfb294bbd
http://arxiv.org/abs/2107.07950
http://arxiv.org/abs/2107.07950
Autor:
Alex Summerfield, Guillaume Cassabois, Christopher J. Mellor, Peter H. Beton, Pierre Valvin, Bernard Gil, Laurence Eaves, Sergei V. Novikov, Tin S. Cheng, C. T. Foxon, Thomas Pelini, Christine Elias
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
Nature Communications
Nature Communications, Nature Publishing Group, 2019, 1 (1), pp.1. ⟨10.1038/s41467-019-10610-5⟩
Nature Communications
Nature Communications, Nature Publishing Group, 2019, 1 (1), pp.1. ⟨10.1038/s41467-019-10610-5⟩
Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides. However, the intrinsic optical properties of monolayer boron nitride remain
Autor:
James Thomas, Jonathan Bradford, Laurence Eaves, Peter H. Beton, James Wrigley, Alex Summerfield, Andrei N. Khlobystov, Christopher J. Mellor, C. Thomas Foxon, Sergei V. Novikov, Tin S. Cheng
Integration of graphene and hexagonal boron nitride (hBN) into lateral heterostructures has drawn focus due to the ability to broadly engineer the material properties. Hybrid monolayers with tuneable bandgaps have been reported, while the interface i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fa4da29d62f4f52ffc3cb5397daecee
Autor:
Hu Long, Tin S. Cheng, Noah Mendelson, Carlo Bradac, Jeffrey R. Reimers, Christopher J. Mellor, Hark Hoe Tan, Alex Zettl, Peter H. Beton, Dipankar Chugh, Michael J. Ford, Andreas Gottscholl, Milos Toth, Igor Aharonovich, Sergei V. Novikov, Vladimir Dyakonov, Chennupati Jagadish
Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a481ac415c988620923fd0976eb8aea
http://arxiv.org/abs/2003.00949
http://arxiv.org/abs/2003.00949
Autor:
Emily Stapleton, Nathan L. Goodey, Takashi Taniguchi, Andrew Davies, Alex Summerfield, Christopher J. Mellor, Peter H. Beton, Kenji Watanabe, C. Thomas Foxon, Laurence Eaves, James Wrigley, Andrei N. Khlobystov, J.D. Albar, Sergei V. Novikov, James C. Thomas, Vladimir V. Korolkov, Tin S. Cheng
Publikováno v:
Nano Letters. 18:498-504
Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, lattice-matched graphene ca
Autor:
Tin S. Cheng, Bernard Gil, C. T. Foxon, Peter H. Beton, Guillaume Cassabois, Laurence Eaves, Sergei V. Novikov, Christopher J. Mellor, Alex Summerfield
Publikováno v:
2019 Compound Semiconductor Week (CSW).
In this work we present our recent results on the high-temperature plasma-assisted molecular beam epitaxy (PA-MBE) of hBN monolayers with atomically controlled thicknesses for 2D applications and on the growth of significantly thicker hBN layers for
Autor:
Tin S. Cheng, Andrei N. Khlobystov, James Wrigley, C. Thomas Foxon, Tyler James, Peter H. Beton, Jonathan Bradford, Laurence Eaves, James Thomas, Christopher J. Mellor, Sergei V. Novikov
Publikováno v:
2D Materials. 8:034001
Monolayers of hexagonal boron nitride (hBN) are grown on graphite substrates using high-temperature molecular beam epitaxy (HT-MBE). The hBN monolayers are observed to grow predominantly from step edges on the graphite surface and exhibit a strong de