High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide

Autor: A. Chevy, Juan P. Martínez-Pastor, Alfredo Segura

Publikováno v: MARTÍNEZ PASTOR, J. ; SEGURA, A. ; CHEVY, A. High-temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin-doped indium selenide. En: Journal of Applied Physics, 1993, vol. 74, no. 5
RODERIC. Repositorio Institucional de la Universitat de Valéncia
instname

A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b4119d741303ba35887a04acf3881bd
https://doi.org/10.1063/1.354597