Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Timothy Vasen"'
Publikováno v:
IEEE Microwave and Wireless Technology Letters. :1-4
Autor:
Timothy Vasen, Brian Novak, Marc Scimonelli, Kevin Frey, Mustapha Saad, Abbey Saia, Benjamin Grisafe, Ken A. Nagamatsu, Josephine Chang, Virginia Wheeler, Karl Hobart, Andrew D. Koehler, Patrick Shea, Stephen Van Campen, Robert S. Howell, Shamima Afroz
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Autor:
Shamima Afroz, Timothy Vasen, Brian Novak, Ken A. Nagamatsu, Patrick Shea, Sam Wanis, Robert S. Howell, Josephine Chang
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Autor:
Jerome T. Mlack, Nick Edwards, Brian Novak, Annaliese Drechsler, Jordan Merkel, Timothy Vasen, Daniel J. Hannan, Paul Brabant, Ishan Wathuthanthri, Justin Parke, Sam Wanis, Robert S. Howell, Ken A. Nagamatsu
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Autor:
Joseph Casamento, Thai-Son Nguyen, Yongjin Cho, Chandrashekhar Savant, Timothy Vasen, Shamima Afroz, Daniel Hannan, Huili (Grace) Xing, Debdeep Jena
Publikováno v:
Applied Physics Letters. 121:192101
AlScN is attractive as a lattice-matched epitaxial barrier layer for incorporation in GaN high electron mobility transistors due to its large dielectric constant and polarization. The transport properties of polarization-induced two-dimensional (2D)
Autor:
Timothy Vasen, Yang-Sih Chang, Stephen Thoms, Gordon C. H. Hsieh, Peter Ramvall, Yee-Chia Yeo, Gerben Doornbos, S. Wang, Chien-Hsun Wang, Georgios Vellianitis, Richard Kenneth Oxland, Carlos H. Diaz, Martin Christopher Holland, Xu Li, Iain G. Thayne, Kaimin M. Yin, Douglas Macintyre, Shang-Wen Chang, Ravi Droopad, M. Edirisooriya, Matthias Passlack, R. Contreras-Guerrero, J.S. Rojas-Ramirez
Publikováno v:
IEEE Transactions on Electron Devices. 62:2429-2436
Frequency (100 ${\rm Hz}\le f \le 1$ MHz) and temperature ( $- 50 \le T \le 20^{\circ }\text{C}$ ) characteristics of low interface state density $D_{\rm {it}}$ high- $\kappa $ gate-stacks on n-InAs have been investigated. Capacitance–voltage ( $C$
Autor:
Casamento, Joseph, Nguyen, Thai-Son, Cho, Yongjin, Savant, Chandrashekhar, Vasen, Timothy, Afroz, Shamima, Hannan, Daniel, Xing, Huili, Jena, Debdeep
Publikováno v:
Applied Physics Letters; 11/7/2022, Vol. 121 Issue 19, p1-7, 7p
Autor:
Wang, Shih-Wei, Vasen, Timothy, Doornbos, Gerben, Oxland, Richard, Chang, Shang-Wen, Li, Xu, Contreras-Guerrero, Rocio, Holland, Martin, Wang, Chien-Hsun, Edirisooriya, Madhavie, Rojas-Ramirez, Juan Salvador, Ramvall, Peter, Thoms, Stephen, Macintyre, Douglas S., Vellianitis, Georgios, Hsieh, Gordon C. H., Chang, Yang-Sih, Yin, Kaimin M., Yeo, Yee-Chia, Diaz, Carlos H.
Publikováno v:
IEEE Transactions on Electron Devices; Aug2015, Vol. 62 Issue 8, p2429-2436, 8p
Autor:
Lu, Yeqing, Zhou, Guangle, Li, Rui, Liu, Qingmin, Zhang, Qin, Vasen, Timothy, Chae, Soo Doo, Kosel, Thomas, Wistey, Mark, Xing, Huili, Seabaugh, Alan, Fay, Patrick
Publikováno v:
IEEE Electron Device Letters; May2012, Vol. 33 Issue 5, p655-657, 3p
This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as N