Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Timothy N. Walter"'
Publikováno v:
Journal of Microelectromechanical Systems. 29:1504-1509
Zinc oxide (ZnO) is a metal oxide semiconductor of interest for a wide range of electronic and optoelectronic device applications. Many devices require etching of ZnO structures and there have been many investigations of ZnO wet-etching processes. Ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95f222922c9300bb34bce1c11a310f03
https://doi.org/10.1109/jmems.2020.3025744
https://doi.org/10.1109/jmems.2020.3025744
Autor:
Thomas N. Jackson, Joan M. Redwing, Suzanne E. Mohney, Xiaotian Zhang, Sora Lee, Mikhail Chubarov, Timothy N. Walter
Publikováno v:
Applied Surface Science. 480:43-51
Atomic layer deposition (ALD) is an enabling technology for the fabrication of many nanoscale semiconductor devices. This study focuses on ALD of ZnO on the two-dimensional (2D) materials MoS2 and WSe2. Mechanically exfoliated flakes and coalesced fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc48987c3a7a3d7abc44ee5aa5e7dd73
https://doi.org/10.1016/j.apsusc.2019.02.182
https://doi.org/10.1016/j.apsusc.2019.02.182
Publikováno v:
Nanotechnology. 32(2)
Metal contacts to two-dimensional layered semiconductors are crucial to the performance of field-effect transistors (FETs) and other applications of layered materials in nanoelectronics and beyond. In this work, the wetting behavior of very thin Au f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a45b8a27833e4cd9106b426649f30314
https://pubmed.ncbi.nlm.nih.gov/33055368
https://pubmed.ncbi.nlm.nih.gov/33055368
Publikováno v:
Applied Physics Letters. 119:102102
Molybdenum carbonitride films prepared by plasma enhanced atomic layer deposition were studied for use as Schottky contacts to n-type gallium nitride. Deposited using bis(tertbutylimino)bis(dimethylamino)molybdenum and a remote plasma N2/H2 plasma, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a2f8a5cb8625b074a51851e55782931
https://doi.org/10.1063/5.0062140
https://doi.org/10.1063/5.0062140
Publikováno v:
Materials Science in Semiconductor Processing. 130:105809
Lift-off is a useful method to pattern metals or other materials in semiconductor device fabrication. Polymer photoresists are commonly used for lift-off; however, these resists cannot be used when the device fabrication requires high temperature wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1a1cd5f80b456261eb4da9c9c6d28a4
https://doi.org/10.1016/j.mssp.2021.105809
https://doi.org/10.1016/j.mssp.2021.105809
Autor:
Suzanne E. Mohney, Tanushree H. Choudhury, Joan M. Redwing, Louis Y. Kirkley, Hamed Simchi, Timothy N. Walter
Publikováno v:
Journal of Materials Science. 52:10127-10139
Sulfidation of selected transition metal thin films (Mo, W, Re, Nb, Ta) was combined with thermodynamic calculations to study the synthesis of transition metal dichalcogenides (TMDCs) and understand variations among the metals as well as processing a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9f9b99c80ffcbd7b226991677f89df1
https://doi.org/10.1007/s10853-017-1228-x
https://doi.org/10.1007/s10853-017-1228-x
Autor:
Ian E. Campbell, Suzanne E. Mohney, Alex Molina, Asad J. Mughal, Michael W. Thomas, Timothy N. Walter, Steven P. Dail
Publikováno v:
ECS Meeting Abstracts. :1072-1072
Although silicon (Si) currently dominates the semiconductor industry, its small 1.1 eV band gap limits its maximum operating temperature, which restricts its use in high-temperature, high-power devices. Gallium nitride (GaN) is an attractive semicond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa6abb77b88b902658f10128c75fa915
https://doi.org/10.1149/ma2021-01331072mtgabs
https://doi.org/10.1149/ma2021-01331072mtgabs
Autor:
Ismaila Dabo, James G. Champlain, Timothy N. Walter, Suzanne E. Mohney, Nathan Keilbart, Kayla A. Cooley, Laura B. Ruppalt
Publikováno v:
Journal of Applied Physics. 128:225306
Germanium telluride is a well-known phase change material (PCM) used in non-volatile memory cells and radio frequency switches. Controlling the properties of GeTe for improved PCM device performance has sometimes been achieved by doping and/or alloyi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::639e1395e72406bf55c26f1be87c3307
https://doi.org/10.1063/5.0029205
https://doi.org/10.1063/5.0029205
Publikováno v:
Nanotechnology. 32:025203
Metal contacts to two-dimensional layered semiconductors are crucial to the performance of field-effect transistors (FETs) and other applications of layered materials in nanoelectronics and beyond. In this work, the wetting behavior of very thin Au f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7647b7b6db2ff33460cebe01e4e69c12
https://doi.org/10.1088/1361-6528/abbb4a
https://doi.org/10.1088/1361-6528/abbb4a
Autor:
Timothy N. Walter, Frances Kwok, Diego Gonzáles-Flores, Suzanne E. Mohney, Hamed Simchi, Philipp Kurz, Holger Dau, Ivelina Zaharieva, Jonas Ohms, Kayla A. Cooley, Carolin E. Frey
A novel method to prepare anodes for water electrolysis cells has been developed, which starts from layers of elemental manganese deposited by physical vapour deposition (PVD) on indium-doped tin oxide (ITO). Oxidation in dry air at 300 °C transform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72fb7f68a42f408dbb224d02500ab4c0
https://doi.org/10.17169/refubium-25606
https://doi.org/10.17169/refubium-25606
