Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Timothy E. Glassman"'
Autor:
Christopher D. Thomas, Michael L. Hattendorf, Mark R. Brazier, K. Zawadzki, R. McFadden, P. Hentges, J. Seiple, W. Han, D. Ingerly, S. Jaloviar, Cory E. Weber, Huichu Liu, Robert James, C. Auth, C. Parker, Kaizad Mistry, M. Prince, V. Chikarmane, S. Ramey, J. Neirynck, A. Blattner, J. Roesler, M. Bost, P. Yashar, D. Hanken, J. Jopling, Ian R. Post, B. McIntyre, C. Kenyon, T. Troeger, S. Pradhan, Pulkit Jain, D. Towner, C. Allen, David Jones, J. Hicks, Timothy E. Glassman, J. Sandford, L. Pipes, R. Heussner, T. Reynolds, M. Buehler, Daniel B. Bergstrom, Tahir Ghani, Pete Smith, R. Grover, Subhash M. Joshi
Publikováno v:
2012 Symposium on VLSI Technology (VLSIT).
A 22nm generation logic technology is described incorporating fully-depleted tri-gate transistors for the first time. These transistors feature a 3rd-generation high-k + metal-gate technology and a 5th generation of channel strain techniques resultin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12d26eb034c9068558a075df1316c3c7
https://doi.org/10.1109/vlsit.2012.6242496
https://doi.org/10.1109/vlsit.2012.6242496
Autor:
C. Ege, A. Agrawal, A. Schmitz, A. Kandas, T. Mule, M. Buehler, D. Rao, J. Hicks, P. Parthangal, David Jones, P. Yashar, R. McFadden, Kaizad Mistry, R. Ascazubi, V. Chikarmane, K. S. Lee, N. Speer, J. Roesler, C. Ganpule, Guotao Wang, D. Ingerly, Timothy E. Glassman, R. Grover, A. Blattner, Y. Shusterman, Manvi Sharma, H. Khan, A. Madhavan, N. Lazo, P. Tiwari, P. Hentges, J. Shin, D. Parsons, Sudarshan Rangaraj, H. Liu, B. Choudhury, F. Cinnor
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
We describe interconnect features for Intel's 22nm high-performance logic technology, with metal-insulator-metal capacitors and nine layers of interconnects. Metal-1 through Metal-6 feature a new ultra-low-k carbon doped oxide (CDO) and a low-k etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c76256ec386ece7a609902e2d6a446d
https://doi.org/10.1109/iitc.2012.6251663
https://doi.org/10.1109/iitc.2012.6251663
Publikováno v:
Journal of the American Chemical Society. 115:1760-1772
Chemistry of tungsten complexes in which N-N bond cleavage occurs, in particular W(IV) hydrazine and W(V) hydrazido complexes. Reactions in which the N-N bond is cleaved by reduction in the presence of protons also are discussed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4905563f6653f2ce4057c1441934e24a
https://doi.org/10.1021/ja00058a022
https://doi.org/10.1021/ja00058a022
Publikováno v:
Journal of the American Chemical Society. 114:8098-8109
Reactions between hydrazine, methylhydrazine, or 1,1-dimethylhydrazine and [Cp * WMe 4 ]PF 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18447a16f2ad2eb5abc37963d876e489
https://doi.org/10.1021/ja00047a019
https://doi.org/10.1021/ja00047a019
Publikováno v:
Inorganic Chemistry. 30:4723-4732
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7947f3cab4eff0c599061ea69d985094
https://doi.org/10.1021/ic00025a010
https://doi.org/10.1021/ic00025a010
Publikováno v:
Organometallics. 10:4046-4057
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbe01fe1061a6e68e6e4af098586b30a
https://doi.org/10.1021/om00058a020
https://doi.org/10.1021/om00058a020
Publikováno v:
Israel Journal of Chemistry. 31:33-53
Hydrogenation (1 atm) of (PCy2)2Re(μ-PCy2)2M(1,5-COD) (M = Rh, Ir; Cy = cyclohexyl; COD = cyclooctadiene), (PCy2)2Re(μ-PCy2)2Rh(DMPE) (DMPE = [Me2PCH2]2), [(PCy2)2ReH(μ-PCy2)2Rh(DMPE)]BF4 and (PCy2)2ReH(μ-PCy2)2Pd-(PPh3) proceeds stepwise with in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fed1d1e5e8643b47930c2b2549238a9
https://doi.org/10.1002/ijch.199100005
https://doi.org/10.1002/ijch.199100005
Autor:
V. Souw, Michael K. Harper, H. Mariappan, P. Vandervoorn, K. Tone, C. Auth, G. Glass, Timothy E. Glassman, Kaizad Mistry, A. Thompson, S. Jaloviar, Tahir Ghani, M. Lu, Nadia M. Rahhal-Orabi, Jason Klaus, J. Sandford, Christopher J. Wiegand, B. Norris, F. Tambwe, T. Troeger, D. Lavric, Pushkar Ranade, Michael L. Hattendorf, Annalisa Cappellani, Subhash M. Joshi, J.-S. Chun, J. Wiedemer, A. Dalis, K. Kuhn, P. Hentges, D. Towner, Charles H. Wallace, Alison Davis, Lucian Shifren
Publikováno v:
2008 Symposium on VLSI Technology.
Two key process features that are used to make 45 nm generation metal gate + high-k gate dielectric CMOS transistors are highlighted in this paper. The first feature is the integration of stress-enhancement techniques with the dual metal-gate + high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61d8f22f52ce9f6ca3a2f66713d2fefa
https://doi.org/10.1109/vlsit.2008.4588589
https://doi.org/10.1109/vlsit.2008.4588589
Publikováno v:
MRS Proceedings. 446
Metal ß‐diketonate complexes are common precursors for chemical vapor deposition (CVD) of a wide variety of thin‐film materials. Liquid delivery CVD has been used to deposit high dielectric constant materials, such as BaxSr1‐xTiO3.[1] This met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da377d0a00658e14328c5cf01ebd39a7
https://doi.org/10.1557/proc-446-321
https://doi.org/10.1557/proc-446-321
Publikováno v:
MRS Proceedings. 446
High-purity alkaline earth ß-diketonate compounds such as [M(thd)2]x (M = Mg, Ca, Sr, Ba) have been utilized for liquid delivery MOCVD.[1] The “parent” compounds are oligomeric species with bridging ß-diketonate ligands and display both limited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fad11181d84c8ec07b1f822a8ee6714
https://doi.org/10.1557/proc-446-327
https://doi.org/10.1557/proc-446-327