Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Timothy D. Henson"'
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The interaction between the reverse recovery charge and the output charge in trench power MOSFETs is discussed. As the trade-off between the on-resistance and the gate charge improves, the output capacitance has more impact on the reverse recovery lo
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
This paper demonstrates a new phenomenon for the state-of-the-art ultra-high density trench power MOSFET: channel conduction during dynamic avalanche even when gate voltage is well below the nominal threshold voltage. In particular, a comprehensive s