Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Timothy, D. Sullivan"'
Publikováno v:
Journal of Anthropological Archaeology. 62:101306
This article examines the complex production and exchange networks through which Central Chiapas polities manufactured and imported fine orange pottery. The Jovel Valley of highland Chiapas formed part of the western frontier of the Maya area, tradit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::656e952a3790f59fa411927ab53cae62
https://doi.org/10.1016/j.jaa.2021.101306
https://doi.org/10.1016/j.jaa.2021.101306
Autor:
Timothy D. Sullivan
Publikováno v:
Latin American Antiquity. 26:452-472
This study investigates changes in strategies ofrulership at the early Zoque polity ofChiapa de Corzo, Chiapas, Mexico, from its inception in the Middle Formative period through its peak of political power during the Terminal Formative period. Incorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2ab98c5f1b7aa029d2fc6ffda229d2f
https://doi.org/10.7183/1045-6635.26.4.452
https://doi.org/10.7183/1045-6635.26.4.452
Autor:
Dileep N. Netrabile, Timothy D. Sullivan, Paul S. McLaughlin, Jeanne P. Bickford, Peter A. Habitz, Baozhen Li
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 11:86-91
Chip level electromigration (EM) reliability is determined by: 1) the element level EM failure probability used for design guideline generation; and 2) the distribution of EM elements against design limits. Balancing these two factors is critical for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce2fcecedb291a010a8c21fd53289351
https://doi.org/10.1109/tdmr.2010.2093526
https://doi.org/10.1109/tdmr.2010.2093526
Autor:
Robin A. Susko, Wolfgang Sauter, Thomas A. Wassick, Timothy H. Daubenspeck, Timothy D. Sullivan, John P. Cincotta
Publikováno v:
ECS Transactions. 16:51-60
Understanding and managing both chip-to-package interaction (CPI) and solder bump electromigration (EM) in new designs is becoming an increasing challenge for flip chip plastic ball grid array (FCPBGA) packaging. Requirements for state-of-the-art dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::042e31b5ac27d968de46ab32a50020f1
https://doi.org/10.1149/1.3114551
https://doi.org/10.1149/1.3114551
Publikováno v:
ECS Transactions. 18:205-211
Stress-induced voids can form in Cu interconnects, due to either thermal expansion mismatch between the metal and the dielectric or due to confined grain growth in the Cu. The fail rate due to stress-induced voids increases as device dimensions decre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a08118b639173f0c2e87d4fbec60e99d
https://doi.org/10.1149/1.3096451
https://doi.org/10.1149/1.3096451
Autor:
T.C. Lee, Timothy D. Sullivan, Alvin W. Strong, Deborah M. Massey, S. Polchlopek, Travis S. Merrill, O. Aubel
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 7:270-277
Reliability monitoring is an important part of process control in high-volume production. For metallization, a wafer-level electromigration (WL-EM) test is usually the method of choice to get a good indication of process variation. Different WL-EM me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef8fd74f2fa91e2cccfdba9b94e6be76
https://doi.org/10.1109/tdmr.2007.902427
https://doi.org/10.1109/tdmr.2007.902427
Autor:
Baozhen Li, Ronald G. Filippi, Timothy D. Sullivan, Emmanuel Yashchin, Cathryn Christiansen, Jason Gill
Publikováno v:
Microelectronics Reliability. 46:2049-2055
The three-parameter lognormal distribution has been demonstrated for applications in electromigration data analysis, especially for Cu interconnect structures with insufficient redundancy. Examples are given on estimating parameter values from experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33f0ef05d769debe34ac78e37da94cfd
https://doi.org/10.1016/j.microrel.2006.01.001
https://doi.org/10.1016/j.microrel.2006.01.001
Autor:
Baozhen Li, Timothy D. Sullivan, Alvin W. Strong, H. S. Rathore, D. Harmon, Jason Gill, Fen Chen, Daniel C. Edelstein
Publikováno v:
Microelectronics Reliability. 46:232-243
The increasing use of low- k dielectrics as inter/intralevel insulation materials and the aggressive scaling of advanced interconnects generate new challenges for thermal and electromigration (EM) solutions. Accurate specification of design rules and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5a14ddd507c8c3c3bfe67a26577c402
https://doi.org/10.1016/j.microrel.2005.05.016
https://doi.org/10.1016/j.microrel.2005.05.016
Publikováno v:
Microelectronics Reliability. 44:365-380
In the past few years, copper has been widely used as interconnect metallization for advanced ultralarge-scale integration (ULSI) circuits. Due to the unique chemical properties of copper compared to its predecessor, aluminum, different integration p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e01e0e570f47eb1005b4deaba33df2b
https://doi.org/10.1016/j.microrel.2003.11.004
https://doi.org/10.1016/j.microrel.2003.11.004
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:80-85
Specific details of both fabrication process and geometry of Cu interconnects result in different electromigration (EM) fail modes. This paper discusses EM characteristics of line depletion stress, i.e., for the case of electrons flowing from a via a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8f2d89c531125543e9f1219d8ec76eb
https://doi.org/10.1109/tdmr.2003.822340
https://doi.org/10.1109/tdmr.2003.822340