Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Timo Langer"'
Autor:
Thomas Riedl, Vinay S. Kunnathully, Alexander Trapp, Timo Langer, Dirk Reuter, Jörg K. N. Lindner
Publikováno v:
Advanced Materials Interfaces, Vol 9, Iss 11, Pp n/a-n/a (2022)
Abstract The size‐dependent strain relaxation in InAs quantum dots on the top face of GaAs(111)A nanopillars is studied experimentally by scanning transmission electron microscopy (STEM) and theoretically using molecular static simulations. In the
Externí odkaz:
https://doaj.org/article/f479fc69c21f4c8c835a45c2a85fb427
Autor:
Thomas Riedl, Vinay S. Kunnathully, Akshay K. Verma, Timo Langer, Dirk Reuter, Björn Büker, Andreas Hütten, Jörg K. N. Lindner
A process sequence enabling the large-area fabrication of nanopillar-patterned semiconductor templates for selective-area heteroepitaxy is developed. Herein, the nanopillar tops surrounded by a SiNx mask film serve as nanoscale growth areas. The mole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78f27fa5c6a0583b00087700cf4d2d6c
https://doi.org/10.1063/5.0121559
https://doi.org/10.1063/5.0121559
Autor:
Dustin Siebert, Dirk Reuter, Sebastian Krehs, Andreas Thiede, Alex Widhalm, Björn Jonas, Nand Lal Sharma, Timo Langer, Jens Förstner, Artur Zrenner
In our work, we have engineered low capacitance single quantum dot photodiodes as sensor devices for the optoelectronic sampling of ultrafast electric signals. By the Stark effect, a time-dependent electric signal is converted into a time-dependent s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b18f0bf83db0b3559d8eb35f4e50db7
http://arxiv.org/abs/2106.00994
http://arxiv.org/abs/2106.00994
Autor:
Vinay Kunnathully, Jörg K. N. Lindner, Dirk Reuter, Thomas Riedl, Timo Langer, Alexander Trapp
Publikováno v:
Physical Review Materials. 4
We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular beam epitaxial growth of InAs at low temperatures on GaAs nanopillars re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3053762b36cab924549874064b236067
https://doi.org/10.1103/physrevmaterials.4.014602
https://doi.org/10.1103/physrevmaterials.4.014602
Autor:
Timo Langer, Jörg K. N. Lindner, Dirk Reuter, Thomas Riedl, Vinay Kunnathully, Alexander Trapp
Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c10dee4ed61372531944b795699583ab