Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Tim Echtermeyer"'
Autor:
Michael Crabb, Patrick Parkinson, Juan Arturo Alanis, H. Selvi, Nawapong Unsuree, Tim Echtermeyer
The design of efficient graphene-silicon (GSi) Schottky junction photodetectors requires detailed understanding of the spatial origin of the photoresponse. Scanning-photocurrent-microscopy (SPM) studies have been carried out in the visible wavelength
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfa561b011d72a77188bf24179e5b845
Publikováno v:
2018 20th International Conference on Electronic Materials and Packaging (EMAP).
Detection of light in the near- and short-wave infrared spectral region is of great interest for applications ranging from imaging to sensing. However, silicon commonly employed for photodetectors is limited in its spectral range to wavelengths of 40
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70b218560de01bc2fc78b5472b3c88e0
https://doi.org/10.1109/emap.2018.8660882
https://doi.org/10.1109/emap.2018.8660882
Autor:
Cinzia Casiraghi, Andrea C. Ferrari, Alexandre Felten, Cornelius Thiele, Tim Echtermeyer, Ralph Krupke, Hilbert von Löhneysen
Publikováno v:
Carbon
We present electron-beam-induced oxidation of single- and bilayer graphene devices in a low-voltage scanning electron microscope. We show that the injection of oxygen leads to targeted etching at the focal point, enabling us to pattern graphene with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5a59a28ee2d835a9570d524372ba6b2
https://doi.org/10.1016/j.carbon.2013.07.038
https://doi.org/10.1016/j.carbon.2013.07.038
Autor:
Anna Eiden, Elefterios Lidorikis, Tim Echtermeyer, Mengfei Wu, Andrea C. Ferrari, Silvia Milana, U. Sassi
The combination of plasmonic nanoparticles and graphene enhances the responsivity and spectral selectivity of graphene-based photodetectors. However, the small area of the metal-graphene junction, where the induced electron-hole pairs separate, limit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da72013e30ec2badd33f937b5e262c98
https://www.repository.cam.ac.uk/handle/1810/279545
https://www.repository.cam.ac.uk/handle/1810/279545
Autor:
Tim Echtermeyer, Jens Hofrichter, Manfred Ramsteiner, Bartholoma us N Szafranek, Martin Otto, Heinrich Kurz, Anne Majerus, V. Geringer, M. Baus
Publikováno v:
Nano Letters
We report on a method for the fabrication of graphene on a silicon dioxide substrate by solid-state dissolution of an overlying stack of a silicon carbide and a nickel thin film. The carbon dissolves in the nickel by rapid thermal annealing. Upon coo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::176cbf8155549272238711c421ae2272
https://doi.org/10.1021/nl902558x
https://doi.org/10.1021/nl902558x
Autor:
B. N. Szafranek, Tim Echtermeyer, Max C. Lemme, Heinrich Kurz, Jens Bolten, Thorsten Wahlbrink, Matthias Schmidt, M. Baus
Publikováno v:
Solid-State Electronics. 52:514-518
In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4bbd3c540b1a644ada909b49a4944f4
https://doi.org/10.1016/j.sse.2007.10.054
https://doi.org/10.1016/j.sse.2007.10.054
Publikováno v:
The European Physical Journal Special Topics. 148:19-26
In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices (FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a94c8bee666fb187ee37f6bb284533f0
https://doi.org/10.1140/epjst/e2007-00222-8
https://doi.org/10.1140/epjst/e2007-00222-8
Autor:
T. Mollenhauer, Thorsten Wahlbrink, Heinrich Kurz, Max C. Lemme, Michael Schmidt, J. K. Efavi, H. D. B. Gottlob, Tim Echtermeyer
Publikováno v:
Materials Science in Semiconductor Processing. 9:904-908
Novel gate stacks with epitaxial gadoliniurn oxide (Gd(2)O(3)) high-k dielectrics and fully silicided (FUSI) nickel silicide (NiSi) gate electrodes are investigated. Ultra-low leakage current densi ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf8378e9aeb8ea37c48c2d0cd5d7b837
https://doi.org/10.1016/j.mssp.2006.10.007
https://doi.org/10.1016/j.mssp.2006.10.007
Autor:
Eberhard Bugiel, Andreas Fissel, T. Mollenhauer, Max C. Lemme, Michael Schmidt, Thorsten Wahlbrink, Heinrich Kurz, J. K. Efavi, H. J. Osten, Tim Echtermeyer, H. D. B. Gottlob, Malte Czernohorsky
Publikováno v:
Solid-State Electronics. 50:979-985
Epitaxial gadolinium oxide (Gd(2)O(3)) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFE ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74a0a0121c0a9d811c7952be13f0a498
https://doi.org/10.1016/j.sse.2006.04.018
https://doi.org/10.1016/j.sse.2006.04.018
Autor:
Tim Echtermeyer, P. S. Nene, Roman V. Gorbachev, Konstantin S. Novoselov, Andrea C. Ferrari, Zhipei Sun, Anna Eiden, Maxim Trushin, Elefterios Lidorikis, Silvia Milana, John Schliemann
Graphene's high mobility and Fermi velocity, combined with its constant light absorption in the visible to far-infrared range, make it an ideal material to fabricate high-speed and ultra-broadband photodetectors. However, the precise mechanism of pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::914b2b89343bcb170250372d8223c501
https://www.repository.cam.ac.uk/handle/1810/279361
https://www.repository.cam.ac.uk/handle/1810/279361