Zobrazeno 1 - 10
of 170
pro vyhledávání: '"Tim D Veal"'
Autor:
Christopher H. Don, Thomas P. Shalvey, Matthew J. Smiles, Luke Thomas, Laurie J. Phillips, Theodore D. C. Hobson, Harry Finch, Leanne A. H. Jones, Jack E. N. Swallow, Nicole Fleck, Christopher Markwell, Pardeep K. Thakur, Tien‐Lin Lee, Deepnarayan Biswas, Leon Bowen, Benjamin A. D. Williamson, David O. Scanlon, Vinod R. Dhanak, Ken Durose, Tim D. Veal, Jonathan D. Major
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 20, Pp n/a-n/a (2023)
Abstract Despite the recent success of CdS/Sb2Se3 heterojunction devices, cadmium toxicity, parasitic absorption from the relatively narrow CdS band gap (2.4 eV) and multiple reports of inter‐diffusion at the interface forming Cd(S,Se) and Sb2(S,Se
Externí odkaz:
https://doaj.org/article/2b30a75e5c3f41c0b67fe73c97d5ef51
Autor:
Hong Cai, Ruiyong Chen, Mounib Bahri, Cara J. Hawkins, Manel Sonni, Luke M. Daniels, Jungwoo Lim, Jae A. Evans, Marco Zanella, Leanne A. H. Jones, Troy D. Manning, Tim D. Veal, Laurence J. Hardwick, Matthew S. Dyer, Nigel D. Browning, John B. Claridge, Matthew J. Rosseinsky
Publikováno v:
ACS Materials Letters. 5:527-535
Autor:
Leanne A. H. Jones, Zongda Xing, Jack E. N. Swallow, Huw Shiel, Thomas J. Featherstone, Matthew J. Smiles, Nicole Fleck, Pardeep K. Thakur, Tien-Lin Lee, Laurence J. Hardwick, David O. Scanlon, Anna Regoutz, Tim D. Veal, Vinod R. Dhanak
Publikováno v:
The Journal of Physical Chemistry C. 126:21022-21033
Autor:
Adam J. Jackson, Benjamin J. Parrett, Joe Willis, Alex M. Ganose, W. W. Winnie Leung, Yuhan Liu, Benjamin A. D. Williamson, Timur K. Kim, Moritz Hoesch, Larissa S. I. Veiga, Raman Kalra, Jens Neu, Charles A. Schmuttenmaer, Tien-Lin Lee, Anna Regoutz, Tung-Chun Lee, Tim D. Veal, Robert G. Palgrave, Robin Perry, David O. Scanlon
Publikováno v:
ACS Energy Letters
Transparent conducting oxides have become ubiquitous in modern optoelectronics. However, the number of oxides that are transparent to visible light and have the metallic-like conductivity necessary for applications is limited to a handful of systems
Autor:
Julia Fernández-Vidal, Ana M. Gómez-Marín, Leanne A. H. Jones, Chih-Han Yen, Tim D. Veal, Vinod R. Dhanak, Chi-Chang Hu, Laurence J. Hardwick
Publikováno v:
The Journal of Physical Chemistry C. 126:12074-12081
Autor:
Jonty I. Scott, Ryan L. Adams, Rodrigo F. Martinez‐Gazoni, Liam R. Carroll, Alison J. Downard, Tim D. Veal, Roger J. Reeves, Martin W. Allen
Publikováno v:
Small.
Autor:
Max Birkett, Christopher N. Savory, Mohana K. Rajpalke, Wojciech M. Linhart, Thomas J. Whittles, James T. Gibbon, Adam W. Welch, Ivona Z. Mitrovic, Andriy Zakutayev, David O. Scanlon, Tim D. Veal
Publikováno v:
APL Materials, Vol 6, Iss 8, Pp 084904-084904-9 (2018)
The temperature-dependence of the band gap of the proposed photovoltaic absorber copper antimony sulphide (CuSbS2) has been studied by Fourier-transform infrared spectroscopy. The direct gap rises from 1.608 to 1.694 eV between 300 and 4.2 K. Below 2
Externí odkaz:
https://doaj.org/article/bdc6b5b86e2343759aad5fc399f67394
Autor:
Max Birkett, Wojciech M. Linhart, Jessica Stoner, Laurie J. Phillips, Ken Durose, Jonathan Alaria, Jonathan D. Major, Robert Kudrawiec, Tim D. Veal
Publikováno v:
APL Materials, Vol 6, Iss 8, Pp 084901-084901-8 (2018)
The candidate photovoltaic absorber antimony selenide Sb2Se3 has been prepared by the commercially attractive close-space sublimation method. Structure, composition, and morphology are studied by x-ray diffraction, scanning electron microscopy, and e
Externí odkaz:
https://doaj.org/article/c5a3f28ffa8f49a1853ad47fd6c8b8b0
Autor:
Laura E. Ratcliff, Takayoshi Oshima, Felix Nippert, Benjamin M. Janzen, Elias Kluth, Rüdiger Goldhahn, Martin Feneberg, Piero Mazzolini, Oliver Bierwagen, Charlotte Wouters, Musbah Nofal, Martin Albrecht, Jack E. N. Swallow, Leanne A. H. Jones, Pardeep K. Thakur, Tien‐Lin Lee, Curran Kalha, Christoph Schlueter, Tim D. Veal, Joel B. Varley, Markus R. Wagner, Anna Regoutz
Publikováno v:
Advanced materials 34(37), 2204217 (2022). doi:10.1002/adma.202204217
Advanced materials 34(37), 2204217 (2022). doi:10.1002/adma.202204217
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a87a2bd887303dc342a2f7671d87550a
Autor:
Matthew J. Smiles, Thomas P. Shalvey, Luke Thomas, Theodore D. C. Hobson, Leanne A. H. Jones, Laurie J. Phillips, Christopher Don, Thomas Beesley, Pardeep K. Thakur, Tien-Lin Lee, Ken Durose, Jonathan D. Major, Tim D. Veal
Publikováno v:
Faraday discussions. 239
Ag-doped GeSe has been successfully grown and compared to undoped GeSe with XRD, photoemissions, ICP-OES and CV. The undoped and Ag-doped GeSe were included in PV devices with the champion device structure and J–V curve shown.