Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Tim Burgess"'
Autor:
Tim Burgess, Dhruv Saxena, Sudha Mokkapati, Zhe Li, Christopher R. Hall, Jeffrey A. Davis, Yuda Wang, Leigh M. Smith, Lan Fu, Philippe Caroff, Hark Hoe Tan, Chennupati Jagadish
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
Until now, efforts to enhance the performance of nanolasers have focused on reducing the rate of non-radiative recombination. Here, Burgess et al.employ controlled impurity doping to increase the rate of radiative recombination.
Externí odkaz:
https://doaj.org/article/e8563126b6564499974ceab250d0a32e
Publikováno v:
The Leading Edge. 42:34-43
Seismic processing and imaging workflows have been refined over many decades to attenuate aspects of the recorded wavefield which would be improperly mapped into the image domain by legacy migration algorithms such as Kirchhoff prestack depth migrati
Publikováno v:
First Break. 40:31-36
Publikováno v:
Second International Meeting for Applied Geoscience & Energy.
Publikováno v:
First International Meeting for Applied Geoscience & Energy Expanded Abstracts.
Autor:
Tim Burgess
The Charlatans'Tim Burgess invites you to the greatest listening party of all time.In 2020 when the world was forced to hit pause on live in-person gigs, Tim Burgess found an ingenious way to bring people together by inviting artists and bands, from
Autor:
Juan Arturo, Alanis, Qian, Chen, Mykhaylo, Lysevych, Tim, Burgess, Li, Li, Zhu, Liu, Hark Hoe, Tan, Chennupati, Jagadish, Patrick, Parkinson
Publikováno v:
Nanoscale advances. 1(11)
Both gain medium design and cavity geometry are known to be important for low threshold operation of semiconductor nanowire lasers. For many applications nanowire lasers need to be transferred from the growth substrate to a low-index substrate; howev
Autor:
Juan Arturo Alanis, Patrick Parkinson, Tim Burgess, Hark Hoe Tan, Mykhaylo Lysevych, Li Li, Qian Chen, Zhu Liu, Chennupati Jagadish
Publikováno v:
Alanis, J A, Chen, Q, Lysevych, M, Burgess, T, Li, L, Liu, Z, Tan, H H, Jagadish, C & Parkinson, P 2019, ' Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization ', Nanoscale Advances . https://doi.org/10.1039/C9NA00479C
Both gain medium design and cavity geometry are known to be important for low threshold operation of semiconductor nanowire lasers. For many applications nanowire lasers need to be transferred from the growth substrate to a low-index substrate; howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5af7b44f7f6d8c73bcf110fccb99f78d
http://xlink.rsc.org/?DOI=C9NA00479C
http://xlink.rsc.org/?DOI=C9NA00479C
Autor:
Chennupati Jagadish, Alex S. Walton, Stefan Skalsky, Tim Burgess, Patrick Parkinson, Peter Mitchell, Sudha Mokkapati, Juan Arturo Alanis, Dhruv Saxena, Mykhaylo Lysevych, Xiaoyan Tang, Hark Hoe Tan
Publikováno v:
Alanis Azuara, J A, Lysevych, M, Burgess, T, Saxena, D, Mokkapati, S, Skalsky, S, Tang, X, Mitchell, P, Walton, A, Tan, H H, Jagadish, C & Parkinson, P 2018, ' Optical study of p-doping in GaAs nanowires for low-threshold and high-yield lasing ', Nano Letters, vol. 19, no. 1, pp. 362-368 . https://doi.org/10.1021/acs.nanolett.8b04048
Semiconductor nanowires suffer from significant non-radiative surface recombination, however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and hence quantum efficiency of emission, allowing demonst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d647b70781c3ac9e4187590faa4cb657
https://doi.org/10.1021/acs.nanolett.8b04048
https://doi.org/10.1021/acs.nanolett.8b04048
Publikováno v:
Nanotechnology.
We have investigated the nonlinear conductance in diffusion-doped Si:GaAs nanowires contacted by patterned metal films in a wide range of temperatureslt;igt;Tlt;/igt;. The wire resistance Rlt;subgt;Wlt;/subgt; and the zero bias resistance Rlt;subgt;C