Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Tim Boescke"'
Autor:
Stephan Kudelka, Stefan Nawka, Theodor Doll, Tim Boescke, Elke Erben, Lothar Frey, Christian Fachmann
Publikováno v:
Microelectronic Engineering. 84:2883-2887
The influence of Si concentration in hafnium silicate dielectrics on thermal stability and dielectric permittivity was analyzed. A phase diagram was developed using GIXRD and FTIR measurement. The stabilization of the ''higher-k'' cubic/tetragonal ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc446230f53db2fe8a239ee63834c06c
https://doi.org/10.1016/j.mee.2007.02.011
https://doi.org/10.1016/j.mee.2007.02.011
Autor:
Tim Boescke, Manuel Quevedo-Lopez, Cristiano Krug, Paul Kirsch, Shrinivas Govindarajan, Gaurang Pant, Bruce Gnade, Jimmy Price, Py Hung, Gerry Moore, Sidi Lanee, Byoung Hun Lee
Publikováno v:
ECS Meeting Abstracts. :1100-1100
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d42ad819c4fcf4d67617e211c2de3080
https://doi.org/10.1149/ma2006-02/22/1100
https://doi.org/10.1149/ma2006-02/22/1100
Autor:
Radovan Kopecek, Tim Boescke, Roman Petres, Alexandre Savtchouk, Marshall Wilson, Valentin D. Mihailetchi, Atilla Toth, Jacek Lagowski, Ferenc Korsos
Publikováno v:
Energy Procedia. :71-77
We report a comprehensive noncontact approach to measurement of the field-effect passivation of emitters for p and n-type base silicon solar cells. The corona charge-voltage technique, extensively used in silicon IC fabrication lines, is utilized in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::229c231dd2984626db70574c88cb5537