Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Tim Baldauf"'
Autor:
Daniel Hessler, Ricardo Olivo, Tim Baldauf, Konrad Seidel, Raik Hoffmann, Chaiwon Woo, Maximilian Lederer, Yannick Raffel
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 7, Iss , Pp 100095- (2024)
This article reports an improvement in the low-frequency noise characteristics in hafnium oxide-based (HfO2) field-effect transistors by different precursor materials at ALD process. The Hafniumoxide on the devices were fabricated once with organic p
Externí odkaz:
https://doaj.org/article/f020b3fa7bcf48608bfe1a3e39669a37
Autor:
Jorge Navarro Quijada, Tim Baldauf, Shubham Rai, Andre Heinzig, Akash Kumar, Walter M. Weber, Thomas Mikolajick, Jens Trommer
Publikováno v:
IEEE Transactions on Nanotechnology. :1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6e58d8d9b3757d001fbf29c7c7cad75
https://doi.org/10.1109/tnano.2022.3221836
https://doi.org/10.1109/tnano.2022.3221836
This contribution discusses scaling aspects of individually gated nanowire Schottky junctions which are essential parts of reconfigurable field effect transistors (RFETs). The applicability of the screening (or natural) length theory in relation to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d88e88ab2b0e08f16797e22ab1c01c82
https://tud.qucosa.de/id/qucosa:79706
https://tud.qucosa.de/id/qucosa:79706
Publikováno v:
IEEE Electron Device Letters. 39:1242-1245
This letter discusses a feasible variant of vertically integrated reconfigurable field effect transistors (RFET) based on top-down nanowires. The structures were studied by 3-D device simulations. Subdividing the structure into two vertical pillars a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b50b4d623f4cdd30f6406e52f5411560
https://doi.org/10.1109/led.2018.2847902
https://doi.org/10.1109/led.2018.2847902
Publikováno v:
IEEE Transactions on Nanotechnology. 16:812-819
In this paper, a technology for top-down single-gated Schottky barrier transistor is presented exhibiting the highest symmetry of on-currents for n- and p-conductance of such silicon-on-insulator-based devices. The symmetry in the current-voltage-cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33dc22fc703f6717625ec985ba2629ce
https://doi.org/10.1109/tnano.2017.2694969
https://doi.org/10.1109/tnano.2017.2694969
Publikováno v:
Solid-State Electronics. 128:148-154
Mechanical stress is an established and important tool of the semiconductor industry to improve the performance of modern transistors. It is well understood for the enhancement of carrier mobility but rather unexplored for the control of the tunnelin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18b420f462d01a90fa94f800d537c22a
https://doi.org/10.1016/j.sse.2016.10.009
https://doi.org/10.1016/j.sse.2016.10.009
Autor:
Jurgen Beister, Paul M. Jordan, Jens Trommer, Andre Heinzig, Walter M. Weber, Thomas Mikolajick, B. Adolphi, Marion Geidel, Tim Baldauf, Ehrenfried Zschech, Annett Winzer, Uwe Mühle, Markus Löffler
Publikováno v:
ACS Nano. 11:1704-1711
Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f592208b2f127cfb00ba63c4180d026c
https://doi.org/10.1021/acsnano.6b07531
https://doi.org/10.1021/acsnano.6b07531
Autor:
Maik Simon, Jens Trommer, Yordan M. Georgiev, Muhammad Bilal Khan, Martin Knaut, Johann W. Bartha, T. Mikolaiick, Walter M. Weber, Arthur Erbe, Tim Baldauf, B. Liang, Andre Heinzig, Dustin Fischer
Publikováno v:
DRC
76th Device Research Conference (DRC), 2018, 24.-27.06.2018, Santa Barbara, USAConference Digest, DRC, 8442159
76th Device Research Conference (DRC), 2018, 24.-27.06.2018, Santa Barbara, USAConference Digest, DRC, 8442159
Introduction: Reconfigurable field effect transistors (RFET) have the ability to toggle polarity between n- and pconductance at runtime [1], [2]. The here presented multiple independent gate (MIG) RFET expands the device functionality by offering add
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1e256ef7e38307dcac4202d8011e4d6
https://doi.org/10.1109/drc.2018.8442159
https://doi.org/10.1109/drc.2018.8442159
Autor:
Dennis Walter, Walter M. Weber, Shubham Rai, Andre Heinzig, Ansh Rupani, Michael Raitza, Christian Mayr, Tim Baldauf, Jens Trommer, Akash Kumar
Publikováno v:
DATE
Silicon Nanowire (SiNW) based reconfigurable field-effect transistors (RFETs) provide an additional gate terminal called the program gate which gives the freedom of programming p-type or n-type functionality for the same device at runtime. This enabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::efb502422615fba48606b13de2a05280
https://tud.qucosa.de/id/qucosa:76835
https://tud.qucosa.de/id/qucosa:76835
Autor:
Thomas Mikolajick, Walter M. Weber, Jens Trommer, Stefan Slesazeck, Andre Heinzig, Tim Baldauf
Publikováno v:
IEEE Transactions on Nanotechnology. 14:689-698
Reconfigurable silicon nanowire field-effect transistors (RFETs) combine the functionality of classical unipolar p-type and n-type FETs in one universal device. In this paper, we show devices exhibiting full symmetry between p- and n-functionality, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e22eabbb71159eb0ff55e89fae2f82ad
https://doi.org/10.1109/tnano.2015.2429893
https://doi.org/10.1109/tnano.2015.2429893