Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Tilman Schimpke"'
Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures
Autor:
Linus Krieg, Florian Meierhofer, Sascha Gorny, Stefan Leis, Daniel Splith, Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann, Xiaoxue Wang, Jana Hartmann, Christoph Margenfeld, Irene Manglano Clavero, Adrian Avramescu, Tilman Schimpke, Dominik Scholz, Hans-Jürgen Lugauer, Martin Strassburg, Jörgen Jungclaus, Steffen Bornemann, Hendrik Spende, Andreas Waag, Karen K. Gleason, Tobias Voss
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
Though integrating functional organic materials with semiconductor nanostructures is attractive for 3D chip processing, realizing these hybrids remains a challenge. Here, the authors report an oxidative chemical vapor deposition-based process for des
Externí odkaz:
https://doaj.org/article/418ca726380048dab4148970fc1b5206
Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures
Autor:
Steffen Bornemann, Christoph Margenfeld, Adrian Stefan Avramescu, Tobias Voss, Marius Grundmann, Jörgen Jungclaus, Zhipeng Zhang, Florian Meierhofer, Irene Manglano Clavero, Andreas Waag, Dominik Scholz, Hendrik Spende, Daniel Splith, Karen K. Gleason, Hans-Jürgen Lugauer, Holger von Wenckstern, Tilman Schimpke, Martin Strassburg, Linus Krieg, Jana Hartmann, Xiaoxue Wang, Stefan Leis, Sascha Gorny
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
Nature communications, 11, Article number: 5092 (2020), DOI 10.1038/s41467-020-18914-7--Nat Commun--https://www.nature.com/ncomms/--http://www.bibliothek.uni-regensburg.de/ezeit/?2553671--2041-1723--2041-1723
Nature Communications
Nature communications, 11, Article number: 5092 (2020), DOI 10.1038/s41467-020-18914-7--Nat Commun--https://www.nature.com/ncomms/--http://www.bibliothek.uni-regensburg.de/ezeit/?2553671--2041-1723--2041-1723
Nature Communications
The combination of inorganic semiconductors with organic thin films promises new strategies for the realization of complex hybrid optoelectronic devices. Oxidative chemical vapor deposition (oCVD) of conductive polymers offers a flexible and scalable
Autor:
Hans-Juergen Lugauer, Benoit Deveaud, Gwénolé Jacopin, Georg Rossbach, Tilman Schimpke, Wei Liu, Christian Mounir, Martin Strassburg, Ulrich T. Schwarz, Adrian Stefan Avramescu
Publikováno v:
Physical Review B
Physical Review B, American Physical Society, 2019, 100 (23), pp.235301. ⟨10.1103/PhysRevB.100.235301⟩
Physical Review B, American Physical Society, 2019, 100 (23), pp.235301. ⟨10.1103/PhysRevB.100.235301⟩
We study the influence of local inhomogeneities on carrier recombination dynamics in single InGaN/GaN core-shell microrods (MRs) by means of time-resolved microphotoluminescence (TRPL) at 10 K. At low carrier density ($\ensuremath{\sim}{10}^{11}\phan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ebd5d79ec75903df1e61a6403727043
https://hal.archives-ouvertes.fr/hal-02397516/document
https://hal.archives-ouvertes.fr/hal-02397516/document
Autor:
Tansen Varghese, Johannes Ledig, Frederik Steib, Martin Dr. Straßburg, Adrian Stefan Avramescu, Lars Nicolai, Achim Trampert, Andreas Waag, Hergo-Heinrich Wehmann, Tilman Schimpke, Hans-Jürgen Lugauer, Hao Zhou, Jana Hartmann, Sönke Fündling
Publikováno v:
Journal of Crystal Growth. 476:90-98
GaN fins are 3D architectures elongated in one direction parallel to the substrate surface. They have the geometry of walls with a large height to width ratio as well as small footprints. When appropriate symmetry directions of the GaN buffer are use
Autor:
Hao Zhou, Matin Sadat Mohajerani, Martin Strassburg, Barbara Szafranski, Adrian Stefan Avramescu, Tobias Voss, Jana Hartmann, Hergo-Heinrich Wehmann, Tilman Schimpke, Angelina Vogt, Andreas Waag, Sönke Fündling
Publikováno v:
Journal of Materials Research. 32:2456-2463
The spectrally and temporally resolved luminescence of three-dimensional (3D) InGaN/GaN microrods and planar light emitting diode (LED) structures is studied for different energy densities of fs-laser excitation pulses and for different sample temper
Autor:
Andreas Koller, Jana Hartmann, Hans-Jürgen Lugauer, Adrian Stefan Avramescu, Andreas Waag, Tilman Schimpke, Amalia Fernando-Saavedra, Johannes Ledig, Martin Strassburg
Publikováno v:
Journal of Crystal Growth, ISSN 0022-0248, 2016-05, Vol. 465
Archivo Digital UPM
Universidad Politécnica de Madrid
Archivo Digital UPM
Universidad Politécnica de Madrid
A core-shell geometry is employed for most next-generation, three-dimensional opto-electric devices based on III–V semiconductors and grown by metal organic vapor phase epitaxy (MOVPE). Controlling the shape of the shell layers is fundamental for d
Autor:
Daniel Bichler, Frank Bertram, Peter Veit, Marcus Müller, Ion Stoll, Jana Hartmann, Jürgen Christen, Franz Zwaschka, Andreas Waag, Martin Mandl, Hans-Jürgen Lugauer, Benjamin Max, Martin Strassburg, Johanna Strube-Knyrim, Bianca Pohl-Klein, Barbara Huckenbeck, Tilman Schimpke
Publikováno v:
physica status solidi (a). 213:1577-1584
A uniform array of gallium nitride core-shell microrod (MR) light-emitting diode (LED) structures was grown by metalorganic vapor phase epitaxy. Defects and the quantum well (QW) luminescence in an individual rod were investigated by scanning tunneli
Autor:
Adrian Stefan Avramescu, Benoit Deveaud, Georg Rossbach, Wei Liu, Hans-Juergen Lugauer, Tilman Schimpke, Christian Mounir, Martin Strassburg, Ulrich T. Schwarz, Gwénolé Jacopin
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2018, 112 (5), pp.052106. ⟨10.1063/1.5009728⟩
Applied Physics Letters, American Institute of Physics, 2018, 112 (5), pp.052106. ⟨10.1063/1.5009728⟩
The optical properties of InGaN/GaN core-shell microrods are studied by time-resolved cathodoluminescence. Probing the carrier dynamics along the length of the rod from 4 to 300 K enables us to decompose radiative (τr) and non-radiative (τnr) lifet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26361d1f1a2e80e5aba801847b4303c5
https://hal.archives-ouvertes.fr/hal-01981682
https://hal.archives-ouvertes.fr/hal-01981682
Autor:
M Angel Sanchez, Tilman Schimpke, David Cherns, E. Calleja, Susanne Albert, Ian Griffiths, A. Bengoechea-Encabo, Martin Strassburg
Publikováno v:
Journal of Microscopy. 262:167-170
3D InGaN/GaN microstructures grown by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been extensively studied using a range of electron microscopy techniques. The growth of material by MBE has led to the growth of cub
Autor:
Andreas Waag, Jana Hartmann, Winfried Daum, Tilman Schimpke, Henning Schuhmann, Xue Wang, Markus Bähr, Wanja Dziony, Michael Seibt, Martin Dr. Straßburg, Johannes Ledig, Matin Sadat Mohajerani, Hergo-Heinrich Wehmann, Lorenzo Caccamo, G. Lilienkamp
Publikováno v:
physica status solidi (a). 212:2830-2836
The three dimensional growth of GaN structures as a basis for the fabrication of 3D GaN core-shell LEDs has attracted substantial attention in the past years. GaN nanorods or microrods with high aspect ratios can be grown by selective area epitaxy on