Zobrazeno 1 - 10
of 88
pro vyhledávání: '"Tillmann Kubis"'
Publikováno v:
Physical Review Applied. 17
Publikováno v:
The Journal of Physical Chemistry A. 124:4984-4989
Organic reactions in microdroplets can be orders of magnitude faster than their bulk counterparts. We hypothesize that solvation energy differences between bulk and interface play a key role in the intrinsic rate constant increase and test the hypoth
Publikováno v:
ACS Materials Letters. 2:247-253
Simulations are essential to accelerate the discovery of new materials and to gain full understanding of known ones. Although hard to realize experimentally, periodic boundary conditions are omnipr...
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Autor:
Mark Townsend, Tillmann Kubis, Philippe Blaise, James Charles, Udita Kapoor, Daniel Lemus, Eric Guichard
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Ultra-scaled FET technology requires simulations at the atomic scale. We present the Victory Atomistic tool inherited from Nemo5. Thanks to a combination of non-equilibrium Green’s functions and state-of-the-art band structure calculations, versati
The nonequilibrium Green's function (NEGF) method is often used to predict transport in atomistically resolved nanodevices and yields an immense numerical load when inelastic scattering on phonons is included. To ease this load, this work extends the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9291538e04b8865df9672560fb46bae
http://arxiv.org/abs/2003.09536
http://arxiv.org/abs/2003.09536
Autor:
Cory E. Weber, Jiwon Chang, Prasad Sarangapani, Stephen M. Cea, Gerhard Klimeck, Tillmann Kubis, Michael Povolotskyi
Publikováno v:
IEEE Transactions on Nanotechnology. 17:968-973
The metal-semiconductor contact resistivity has started to play a critical role for the overall device performance as Si is reaching 10-nm size ranges. The International Technology Roadmap for Semiconductors (ITRS) target predicts a requirement of $\
Publikováno v:
Physical Review Applied. 12
In semiconductor physics, interaction of electrons with environmental disorder (phonons, impurity atoms, or other electrons) is important in shaping the band structure. These interactions result in ``tailing'' of the density of states near band edges
Autor:
Gerhard Klimeck, Xiulin Ruan, Yang Zhong, Prasad Sarangapani, Kai Miao, Jingjing Shi, Timothy S. Fisher, Tillmann Kubis, Yuanchen Chu
The non-equilibrium Green's function (NEGF) method with B\"uttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with molecular dynamics (MD) simulations. For simplicity, the interface of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d3694bb3ae39505d1fdb454e8ac8c3f
http://arxiv.org/abs/1908.11578
http://arxiv.org/abs/1908.11578
Publikováno v:
Visualization in Engineering, Vol 6, Iss 1, Pp 1-16 (2018)
Introduction Given that the nanoscale regime has been reached, atomistic simulations are being used as predictive tools on a nanoscopic scale in nanoelectronics, materials science, and computational fluid dynamics. These simulations are generally sup