Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Tillmann Krauss"'
Autor:
Maximilian Reuter, Andreas Kramer, Tillmann Krauss, Johannes Pfau, Jurgen Becker, Klaus Hofmann
Publikováno v:
2022 IEEE 40th Central America and Panama Convention (CONCAPAN).
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 68:114-125
Reconfigurable FETs (RFETs) are ambipolar transistors featuring the ability to conduct both electrons and holes, which is often achieved through the use of silicon nanowires or similar gate-all-around topologies. In this article, we present initial r
Autor:
Udo Schwalke, Mahdi Moradinasab, Tillmann Krauss, Johannes Pfau, Maximilian Reuter, Jürgen Becker, Klaus Hofmann
Publikováno v:
LASCAS
Recently, unique novel characteristics of ambipolar transistors have been explored in various forms on both device and cell level. Most of these so called reconfigurable or polarity controllable devices are based on silicon nanowires, carbon nanotube
Autor:
Mahdi Moradinasab, Jürgen Becker, Tillmann Krauss, Maximilian Reuter, Udo Schwalke, Johannes Pfau, Klaus Hofmann
Publikováno v:
APCCAS
Ambipolar transistors have emerged recently and are presented on device and cell level. The ability to conduct both electrons and holes is often provided by the use of silicon nanowires, carbon nanotubes or similar gate-all-around topologies. Large s
Publikováno v:
IEEE Transactions on Electron Devices. 64:3808-3815
The physical influence of temperature down to the cryogenic regime is analyzed in a comprehensive study and the comparison of IV and III–V Schottky barrier (SB) double-gate MOSFETs. The exploration is done using the Synopsys TCAD Sentaurus device s
Publikováno v:
ECS Transactions. 75:65-71
In this work we investigate the in situ growth of carbon nanotubes (CNTs) on different dielectric stacks for use in discrete field-effect transistor devices. While CNT growth is demonstrated on all stacks, only devices fabricated on atomic layer depo
Publikováno v:
MIXDES
In this paper we focus on the implementation of a process flow of SB-MOSFETs into the process simulator of the Synopsys TCAD Sentaurus tool-chain. The improved structure containing topography is briefly discussed and further device simulations are ap
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS
Publikováno v:
DTIS
In this paper, we demonstrate by extending TCAD simulations based on experimental data of fabricated electrostatically doped, reconfigurable planar double-gate field-effect transistors, the improved characteristics of a triple gate device design. The
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:Q46-Q50
In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable,planar,CMOS-compatiblefield-effecttransistor(FET)structure.ThisplanardeviceisbasedonourpreviouslypublishedSi-nanowire
Publikováno v:
MIXDES
In this paper we present a simulation framework to account for the Schottky barrier lowering models in SB-MOSFETs within the Synopsys TCAD Sentaurus tool-chain. The improved Schottky barrier lowering model for field emission is considered. A strategy