Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Till Schlösser"'
Autor:
Till Schlösser, Stefan Mueller, Jan Paul, R. Hoffmann, Ekaterina Yurchuk, Johannes Müller, Stefan Slesazeck, Roman Boschke, Ralf van Bentum, Dominik Martin, Uwe Schroeder, Thomas Mikolajick
Publikováno v:
IEEE Transactions on Electron Devices. 61:3699-3706
The recently discovered ferroelectric behavior of HfO 2 -based dielectrics yields the potential to overcome the main challenges of the ferroelectric field-effect transistors (FeFETs) - CMOS compatibility as well as scalability to the state-of-the-art
Autor:
Alban Zaka, Stefan Mueller, Tom Herrmann, Ekaterina Yurchuk, Uwe Schroder, Thomas Mikolajick, Till Schlösser, R. Hoffmann, Jan Paul, Matthias Goldbach, Roman Boschke, Johannes Müller
Publikováno v:
IEEE Transactions on Electron Devices. 60:4199-4205
Ferroelectric Si:HfO2 has been investigated starting from metal-ferroelectric-metal (MFM) capacitors over metal-ferroelectric-insulator-semiconductor (MFIS) and finally ferroelectric field-effect-transistor (FeFET) devices. Endurance characteristics
Autor:
Stefan Slesazeck, Stefan Müller, Till Schlösser, Jan Paul, Ekaterina Yurchuk, Johannes Müller, Martin Trentzsch, Dominik Martin, Thomas Mikolajick, Uwe Schröder, Ralf van Bentum, Jonas Sundquist
Publikováno v:
Solid-State Electronics. 88:65-68
Throughout the 22 nm technology node HfO 2 is established as a reliable gate dielectric in contemporary complementary metal oxide semiconductor (CMOS) technology. The working principle of ferroelectric field effect transistors FeFET has also been dem
Autor:
R. Hoffmann, Roman Boschke, Till Schlösser, Stefan Mueller, Johannes Müller, Stefan Slesazeck, Martin Trentzsch, Jonas Sundqvist, Jan Paul, Ralf van Bentum, Dominik Martin, Ekaterina Yurchuk, Thomas Mikolajick, Uwe Schroeder
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
Novel HfO 2 -based non-volatile ferroelectric field effect transistors (FeFETs) reveal integration and scaling properties superior to the devices utilizing perovskite-type ferroelectrics. However, until now the switching endurance of only 10 4 progra
Autor:
Sergei V. Kalinin, Jan Paul, Stefan Müller, A. Kersch, Thomas Mikolajick, Uwe Schröder, Dominik Martin, Till Schlösser, S. Riedel, Tony Schenk, P. Polakowski, Johannes Müller, Thomas M. Arruda, Amit Kumar, R. van Bentum, Ekaterina Yurchuk, Konrad Seidel, K. Khullar, Wenke Weinreich, Roman Boschke, T. S. Boscke
Publikováno v:
2013 IEEE International Electron Devices Meeting.
With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existi
Autor:
Malte Czernohorsky, Jan Paul, Konrad Seidel, Till Schlösser, Thomas Mikolajick, Ekaterina Yurchuk, Uwe Schröder, K. Gebauer, Stefan Slesazeck, R. Hoffmann, Dominik Martin, Roman Boschke, Martin Trentzsch, Stefan Müller, Jonas Sundqvist, Johannes Müller, P. Polakowski, P. Kücher
Publikováno v:
2012 Symposium on VLSI Technology (VLSIT).
We report on the most aggressively scaled ferroelectric field effect transistor so far. These were successfully fabricated using ferroelectric Si:HfO 2 in a 28 nm HKMG stack (TiN/Si:HfO 2 /SiO 2 /Si). For a ± 5 V program/erase operation with pulses
HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention
Autor:
Ekaterina Yurchuk, Uwe Schröder, Till Schlösser, Thomas Mikolajick, R. Hoffmann, Martin Trentzsch, Ralf van Bentum, Stefan Müller, Stefan Slesazeck, Roman Boschke, Jan Paul, Dominik Martin, Johannes Müller
Publikováno v:
2012 4th IEEE International Memory Workshop.
We report the fabrication of highly scaled sub-0.3 μm ferroelectric field-effect transistors on the basis of ferroelectric HfO2. The electrical properties of 9 nm thick Si-doped HfO2 films depending on the silicon content and the annealing temperatu
Autor:
Martin Popp, D. Manger, U. Scheler, K. Mummler, H. Seidl, S. Tegen, B. Goebel, M. Sesterhenn, Till Schlösser, Peter Moll, J. Lutzen, Stefan Slesazeck
Publikováno v:
Digest. International Electron Devices Meeting.
A high performance surrounding gate transistor (SGT) enabling sufficient static and dynamic retention time of future DRAM cells is presented. For the first time, we demonstrate a fully depleted SGT, that shows no reduction of the retention time due t