Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Tikno Harjono"'
Publikováno v:
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS).
A new approach using a combination of analytical models, Spice simulations, and test structures is reported that allows for a comprehensive treatment of 3-dimensional (3D) distributed effects in vertical power FETs. This method leads to higher accura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08709ec9fa36136731930bd3e740e390
https://doi.org/10.1109/icmts.2019.8730949
https://doi.org/10.1109/icmts.2019.8730949
Autor:
Courtney Parker, Sandeep R. Bahl, Pascale Francis, Jon Tao, William French, Jeng-Jiun Yang, Constantin Bulucea, Vijay Krishnamurthy, Tikno Harjono
Publikováno v:
IEEE Transactions on Electron Devices. 57:2363-2380
The physics, technology, and modeling of complementary asymmetric MOSFETs are reviewed and illustrated with statistically representative silicon data from a recent manufacturing implementation, in which the transistors for the secondary power supply
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe90d3a43b3dd89584384fdff6bd19ab
https://doi.org/10.1109/ted.2010.2057197
https://doi.org/10.1109/ted.2010.2057197