Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes

Autor: Tihomir Knezevic, Eva Jelavić, Yuichi Yamazaki, Takeshi Ohshima, Takahiro Makino, Ivana Capan

Publikováno v: Materials. 16:3347

We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ba9983719cab999c3c5058db3127634
https://doi.org/10.3390/ma16093347

Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

Autor: Erwin Hardeveld, Tomislav Suligoj, Xingyu Liu, Lis K. Nanver, Tihomir Knezevic

Publikováno v: IEEE electron device letters, 40(6):8686173, 858-861. IEEE

A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at 250 °C by chemical vapor deposition (CVD), forming junctions with low saturation current. They displayed the same efficient suppression of electron injection a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6372318a1550437214f8376f13699cc5
https://doi.org/10.1109/led.2019.2910465

Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode

Autor: Tihomir Knezevic, Lovro Markovic, Tomislav Suligoj

Publikováno v: MIPRO

In this work, different mechanisms that could cause degradation of the ideality factor in Al/Ge Schottky diodes on Si substrate are examined. Measured I-V characteristics of Schottky diodes have been fitted by the model of the diode developed in TCAD

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8999f2da2ad62e113860edb74eb13935
https://doi.org/10.23919/mipro48935.2020.9245134

Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C

Autor: Ahmed Elsayed, Tomislav Suligoj, Tihomir Knezevic, Xingyu Liu, Jan F. Dick, Lis K. Nanver, Joerg Schulze

Publikováno v: ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC), 242-245
STARTPAGE=242;ENDPAGE=245;TITLE=ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC)
ESSDERC

Pure boron deposited on silicon for the formation of p+n-like junctions was studied for deposition temperatures down to 50 °C. The commonly used chemical-vapor deposition method was compared to molecular beam epitaxy with respect to the electrical c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be4d7f9785ea416d4f8b675c6aa7c8d8
https://research.utwente.nl/en/publications/c01a23ee-ea59-4eff-ae0b-ab8419aca15c

Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions

Autor: Lis K. Nanver, Tihomir Knezevic, Tomislav Suligoj

Publikováno v: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017-Proceedings, 72-76
STARTPAGE=72;ENDPAGE=76;TITLE=2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017-Proceedings
MIPRO

Interface states at metal-semiconductor or semiconductor-semiconductor interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions that are contacted by metal, can be beneficial for suppressing the injection of majority carriers

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f51a062c5c0237a1b9be8dec45933cb
http://www.scopus.com/inward/record.url?scp=85027696765&partnerID=8YFLogxK