Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Tihomir, Car"'
Publikováno v:
Metals and Materials International. 25:1227-1234
Some of mechanical, electrical, and thermal properties of the Al–(Nb, Mo, Ta, W) binary thin films which are important for the stability and usability of the amorphous alloys were examined. Samples were prepared by magnetron deposition technique in
Publikováno v:
Materials
Volume 14
Issue 4
Materials, Vol 14, Iss 766, p 766 (2021)
Volume 14
Issue 4
Materials, Vol 14, Iss 766, p 766 (2021)
Structural, optical and electrical properties of Al+MoO3 and Au+MoO3 thin films prepared by simultaneous magnetron sputtering deposition were investigated. The influence of MoO3 sputtering power on the Al and Au nanoparticle formation and spatial dis
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 29(43)
We theoretically interpret the thermal behaviour of the average radius versus substrate temperature of regular quantum dot/nanocluster arrays formed by sputtering semiconductor/metal atoms with oxide molecules. The analysis relies on a continuum theo
Autor:
Matjaž Panjan, Peter Panjan, Marko Jerčinović, Tihomir Car, Nikola Radić, Miha Čekada, Aljaž Drnovšek
The growth defects in magnetron sputtered coatings have been well studied in industrial environment. In this work, on the other hand, the emphasis is in observing the same phenomena in a lab-scale UHV environment. TiN and CrN films were deposited at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0bd54e66265ec3677d8aa79469a97ef
https://doi.org/10.1016/j.vacuum.2016.12.012
https://doi.org/10.1016/j.vacuum.2016.12.012
We theoretically interpret the thermal behaviour of the average radius versus substrate temperature of regular quantum dot/nanocluster arrays formed by sputtering semiconductor/metal atoms with oxide molecules. The analysis relies on a continuum theo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01613e3ac284985dccf344926f60d0b1
https://doi.org/10.1088/1361-648x/aa7f3c
https://doi.org/10.1088/1361-648x/aa7f3c
Publikováno v:
Vacuum. 98:75-80
Structural relaxation and crystallization of Al-(Nb, Mo, Ta, W) amorphous thin films under isochronal condition were examined by continuous in situ electrical resistance measurements in vacuum. The amorphous Al-early transition metals (TE) thin films
Publikováno v:
Thin Solid Films. 517:4605-4609
The thin films of Al x Nb 1 − x (95 ≥ x ≥ 20), Al x Mo x (90 ≥ x ≥ 20) and Al x Ta 1 − x (95 ≥ x ≥ 20) were prepared by magnetron codeposition at room temperature. The average film thickness was from 325 to 400 nm, depending on the fi
Publikováno v:
Japanese Journal of Applied Physics. 41:5618-5623
The effects of annealing in reactive gases (H2, N2, O2) upon the optoelectric properties of nanophased titanium dioxide (TiO2) prepared by chemical vapour deposition (CVD) were investigated. The nanocrystalline structure containing nanosize grains an
Publikováno v:
Vacuum. 67:519-523
The composition of amorphous silicon carbide thin films, deposited by magnetron sputtering were analysed by vibrational spectroscopy (FTIR, Raman), Auger spectroscopy (AES) and IBA technique (Ion Beam Analysis) which includes RBS (Rutherford Backscat
Publikováno v:
Applied Physics A: Materials Science & Processing. 68:69-73
Crystallization kinetics of the amorphous Al-W thin films under non-isothermal conditions was examined by continuous in situ electrical resistance measurements in vacuum. The estimated crystallization temperature of amorphous films in the composition