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pro vyhledávání: '"Tien-Yih Lin"'
Autor:
Tien-Yih Lin, 林添義
83
GaAs field effect transistors (FETs) utilizing multiple -dopig profiles grown by low-pressure metalorganic chemicalapor deposition (LP-MOCVD) have been fabricated successfully.e use different δ-doping periods and different arrangement of_-do
GaAs field effect transistors (FETs) utilizing multiple -dopig profiles grown by low-pressure metalorganic chemicalapor deposition (LP-MOCVD) have been fabricated successfully.e use different δ-doping periods and different arrangement of_-do
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/50332572522776978625
Publikováno v:
IEEE Transactions on Electron Devices. 43:1181-1186
GaAs field-effect transistors (FET's) utilizing multiple /spl delta/-doping profiles to generate different shape of equivalent channels were demonstrated. The proposed structures containing three different triple-/spl delta/-doping profiles were grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c1376953065884dfa317ec9ddd87d6
https://doi.org/10.1109/16.506766
https://doi.org/10.1109/16.506766
