Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Tien-Yen Wang"'
Autor:
Tien-Yen Wang, 王典彥
91
The paper presents a cyclic analog to digital converter (ADC) used for gamma spectroscopy. The 10-bit ADC has an input signal range ± 0.8V with the resolution near 1mV. The cyclic architecture greatly simplifies the design of comparators in
The paper presents a cyclic analog to digital converter (ADC) used for gamma spectroscopy. The 10-bit ADC has an input signal range ± 0.8V with the resolution near 1mV. The cyclic architecture greatly simplifies the design of comparators in
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/25500819431571147488
Autor:
Keng-Hao Yang, Tien-Fu Chen, Ming-Hsiu Lee, Tien-Yen Wang, Hsiang-Lan Lung, Win-San Khwa, Meng-Fan Chang, Tzu-Hsiang Su, Chung H. Lam, Jau-Yi Wu, Sangbum Kim, Hsiang-Pang Li, Matthew J. BrightSky
Publikováno v:
IEEE Journal of Solid-State Circuits. 52:218-228
For multilevel cell (MLC) phase change memory (PCM), resistance drift (R-drift) phenomenon causes cell resistance to increase with time, even at room temperature. As a result, the fixed-threshold-retention (FTR) raw-bit-error-rate (RBER) surpasses pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a503798eb7c7cb1f60454aa8c1f34e09
https://doi.org/10.1109/jssc.2016.2597822
https://doi.org/10.1109/jssc.2016.2597822
Autor:
Hsiang-Lan Lung, Meng-Fan Chang, Tzu-Hsiang Su, Jau-Yi Wu, Ming-Hsiu Lee, Sangbum Kim, Hsiang-Pang Li, Tien-Yen Wang, Win-San Khwa, Chung H. Lam, Matthew J. BrightSky
Publikováno v:
IEEE Electron Device Letters. 37:1422-1425
Multilevel cell (MLC) phase change memory (PCM) offers many potential advantages in scalability, bit-alterability, non-volatility, and high program speed. While many program approaches had been proposed, they were usually evaluated in energy, delay,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bf36e36e4f5e4ffea7e22e482dc0152
https://doi.org/10.1109/led.2016.2614513
https://doi.org/10.1109/led.2016.2614513
Autor:
Erh-Kun Lai, Tseung-Yuen Tseng, Feng-Ming Lee, Ming-Hsiu Lee, Dai-Ying Lee, Hsiang-Lan Lung, Chih-Yuan Lu, Kuang-Hao Chiang, Tien-Yen Wang, Yu-Yu Lin, Yu-Hsuan Lin, Kuang-Yeu Hsieh, Jau-Yi Wu
Publikováno v:
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
TMO ReRAMs, being built on defect states, are intrinsically subject to variability. In this work, cell to cell variability is studied by applying write shots with different current and voltage for Forming, SET and RESET operation, respectively. We fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa738ceaf9c8d168d507a3c0ed29df88
https://doi.org/10.1109/vlsi-tsa.2016.7480501
https://doi.org/10.1109/vlsi-tsa.2016.7480501
Autor:
Tien-Yen Wang, Sangbum Kim, Win-San Khwa, Chung H. Lam, Tien-Fu Chen, Hsiang-Pang Li, Keng-Hao Yang, Jau-Yi Wu, Tzu-Hsiang Su, Hsiang-Lam Lung, Ming-Hsiu Lee, Meng-Fan Chang, Matthew J. BrightSky
Publikováno v:
ISSCC
The large performance gap between traditional storage and the rest of the memory hierarchy calls for a storage class memory (SCM) to fill the need. Phase change memory (PCM) is an emerging memory candidate for SCM with the advantages of scalability,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f41427a7ecd60680b0cc36b095183cdb
https://doi.org/10.1109/isscc.2016.7417943
https://doi.org/10.1109/isscc.2016.7417943
Autor:
Huai-Yu Cheng, Sangbum Kim, Erh-Kun Lai, T.H. Su, H.L. Lung, W. S. Khwa, Roger W. Cheek, Jau-Yi Wu, Matthew J. BrightSky, Sheng-Chih Lai, Wei-Chih Chien, Ming-Hsiu Lee, Yu Zhu, Tien-Yen Wang, C. Lam, Hongmei Li, Tze-chiang Chen, M.L. Wei
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
Multi-level-cell (MLC) is a critical technology to achieve low bit cost for phase change memory. However, resistance drift is an intrinsic material property that kills memory window and imposes formidable challenges for MLC. In this work, we report a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed6c7838990869184e063d909ebc3fcc
https://doi.org/10.1109/vlsit.2015.7223706
https://doi.org/10.1109/vlsit.2015.7223706
Autor:
Tien-Yen Wang, P. Y. Du, Huai-Yu Cheng, Matthew J. BrightSky, Meng-Fan Chang, Win-San Khwa, Ming-Hsiu Lee, C. Lam, Wei-Chih Chien, Sangbum Kim, T.H. Hsu, Y.Y. Chen, Erh-Kun Lai, T.H. Su, H.L. Lung, Jau-Yi Wu, Yu Zhu, H.P. Li
Publikováno v:
2015 IEEE International Memory Workshop (IMW).
Inherent cell variation of phase change memory is difficult to control by material or device engineering alone. We previously reported R-I curve shift detection scheme as a good method for monitoring PCM cell characteristics. This paper extends that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84da8042d8d9b504bbdbc3750b091001
https://doi.org/10.1109/imw.2015.7150271
https://doi.org/10.1109/imw.2015.7150271
Autor:
C. Lam, Tien-Yen Wang, P. Y. Du, Roger W. Cheek, Yu Zhu, Jau-Yi Wu, Huai-Yu Cheng, T. H. Hsu, Wei-Chih Chien, Matthew J. BrightSky, Ming-Hsiu Lee, M. F. Chang, Erh-Kun Lai, T.H. Su, H.L. Lung, W. S. Khwa, H.P. Li, Sangbum Kim
Publikováno v:
2014 IEEE International Electron Devices Meeting.
A novel Cycle Alarm Point (CAP) inspection is proposed to monitor PCM cycling degradation. The degradation appears in two stages - (1) right shift of R-I during moderate cycling degradation, and (2) left shift of R-I when cycling damage is severe. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50ca8798342f90043b9d6b81a38fcffc
https://doi.org/10.1109/iedm.2014.7047138
https://doi.org/10.1109/iedm.2014.7047138
Autor:
Yu Zhu, Robert L. Bruce, Roger W. Cheek, Huai-Yu Cheng, Wei-Chih Chien, Wanki Kim, Matthew J. BrightSky, H.L. Lung, Jau-Yi Wu, Sangbum Kim, C. Lam, Tien-Yen Wang
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
We discovered that by changing the dielectric capping layer above the phase change memory element we can change the SET speed and data retention of the memory. This allows us, for the first time, to integrate memories of different functions on the sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de12b62bec9cfd18c3eee2372a8e8f32
https://doi.org/10.1109/vlsit.2014.6894383
https://doi.org/10.1109/vlsit.2014.6894383
Autor:
Tien-Yen Wang, Yu Zhu, Ming-Hsiu Lee, Matthew J. BrightSky, Erh-Kun Lai, Hongmei Li, Tze-chiang Chen, Roger W. Cheek, H.L. Lung, Y.Y. Chen, W. S. Khwa, C. Lam, H. C. Lu, Jau-Yi Wu, Huai-Yu Cheng
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
Conventional phase change memory (PCM) stores information in amorphous/crystalline states that can be read out as HRS/LRS. In this work we report a radically different mode of storage that can concurrently and independently work with the conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49963429bf03574acc3cf050ef0269b5
https://doi.org/10.1109/vlsit.2014.6894382
https://doi.org/10.1109/vlsit.2014.6894382