Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Tien-I Bao"'
Autor:
Tien-I Bao, 包天一
83
The effects of low energy plasma induced (or enhanced) processes on the hydrogenated silicon oxide thin film deposition are investigated in an rf magnetron plasma system using an in situ, real time single wavelength ellipsometer, infrared abs
The effects of low energy plasma induced (or enhanced) processes on the hydrogenated silicon oxide thin film deposition are investigated in an rf magnetron plasma system using an in situ, real time single wavelength ellipsometer, infrared abs
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/92063526421086727722
Autor:
Shau-Lin Shue, H.H. Lu, H. Y. Huang, H. C. Chen, T. H. Liu, B. L. Lin, Cheng-Hsiung Tsai, Shang-Yun Hou, Y. H. Wu, C. W Shih, M. H. Hsieh, K. F. Cheng, H. H. Lee, C. W. Lu, Lee Ming-Han, C. L. Teng, C.H. Yu, Tien-I Bao, Chung-Ju Lee
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
High stresses generated from chip-package interactions (CPI), especially when large die is flip mounted on organic substrate using Pb-free C4 bumps, can easily cause low-k delamination. A novel scheme by applying an elastic material can effectively r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22fd1243040b0637b7ee6889336f5ab3
https://doi.org/10.1109/iitc-mam.2015.7325587
https://doi.org/10.1109/iitc-mam.2015.7325587
Autor:
Shy-Jay Lin, Allen Carroll, Alan D. Brodie, Luca Grella, Tsung-Chih Chien, Burn Jeng Lin, Jaw-Jung Shin, Tien-I Bao, Shih-Chi Wang, Chih Wei Lu, Mark A. McCord
Publikováno v:
SPIE Proceedings.
KLA-Tencor is currently developing Reflective Electron Beam Lithography (REBL), targeted as a production worthy multiple electron beam tool for next generation high volume lithography. The Digital Pattern Generator (DPG) integrated with CMOS and MEMS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de5bd98a0c67f5afede178fb276ce613
https://doi.org/10.1117/12.2045416
https://doi.org/10.1117/12.2045416
Publikováno v:
Journal of Applied Physics. 78:3342-3347
The properties of a‐SiOx:H thin films deposited at low temperature (∼ 50 °C) in a low energy magnetron rf plasma system with Ar/SiH4/O2 gas mixtures are investigated. In the low pressure regime (about 5 mTorr reactive gases), the surface reactio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abf66d49b9979f6578db21ada784f5f5
https://doi.org/10.1063/1.360028
https://doi.org/10.1063/1.360028
Publikováno v:
Journal of Applied Physics. 78:489-493
The effect of the externally introduced rf magnetron plasma on the particle size distribution on films deposited by pulsed laser ablation is investigated. A cw low energy magnetron rf plasma is sustained between the target and the substrate during th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3aff304bfb1befcd230e4f387182e56
https://doi.org/10.1063/1.360632
https://doi.org/10.1063/1.360632
Autor:
Shau-Lin Shue, Chung-Ju Lee, Singh Sunil K, T. J. Tsai, Tien-I Bao, T. M. Huang, C.H. Yu, Y. S. Chang, C. W. Lu, Cheng-Hsiung Tsai, Hsin-Chieh Yao
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
This study evaluated plasma treatment processes on 193i and EUV photoresist to improve the line width roughness (LWR) performance in porous low-k/ultra-thin barrier Cu interconnect. We successfully demonstrated 20% LWR reduction for 193i PR and 11% f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::165e1f3e2c5b334f1338581d1a448cc8
https://doi.org/10.1109/iitc.2012.6251569
https://doi.org/10.1109/iitc.2012.6251569
Autor:
Singh Sunil K, Y. S. Chang, T. J. Tsai, Cheng-Hsiung Tsai, C.H. Yu, T. M. Huang, Shau-Lin Shue, Chung-Ju Lee, Tien-I Bao, C. W. Lu
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
This research focus on low radical plasma etch (LRPE) process and its impact on highly porous dielectric material (extreme-low-k, ELK, k=2.4). We demonstrate a dual damascene (DD) process flow without k degration by low radical and pore sealing plasm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0990d7932ca7b6a8b39e6bd75fc246c
https://doi.org/10.1109/iitc.2011.5940313
https://doi.org/10.1109/iitc.2011.5940313
Publikováno v:
Semiconductor Science and Technology. 7:1123-1126
The I-V characteristics of SiOx films deposited in an RF magnetron system with low pressure ( approximately 6 mTorr) SiH4/O2/Ar gas mixtures have been studied. With the enhanced surface processes under the high flux, low energy ion bombardment, the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c11ff6d260d9230bc8567df78e0ff92d
https://doi.org/10.1088/0268-1242/7/8/018
https://doi.org/10.1088/0268-1242/7/8/018
Publikováno v:
Semiconductor Science and Technology. 5:795-798
A novel low-temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c5bc709e224016ce38228103e7da20f
https://doi.org/10.1088/0268-1242/5/7/028
https://doi.org/10.1088/0268-1242/5/7/028
Autor:
I. Lin, Tien I. Bao
Publikováno v:
Journal of Applied Physics. 78:6852-6854
The effect of the low energy (30 eV) Ar plasma on the property of the deposited ultra thin a‐SiOX:H (0≤X≤2) films is investigated by alternate deposition and post‐deposition Ar plasma treatment processes in a rf hollow oval magnetron system u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d58d9d3b3a2d697f4e4d038f562b44b6
https://doi.org/10.1063/1.360448
https://doi.org/10.1063/1.360448