Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Tien-Han Yu"'
Autor:
Tien-Han Yu, 余典翰
102
Most digital speech processing techniques are often designed for certain languages. Therefore, for works that contain cross-language data, information of all languages is required. Yet, when faced upon corpora of multiple languages in the gl
Most digital speech processing techniques are often designed for certain languages. Therefore, for works that contain cross-language data, information of all languages is required. Yet, when faced upon corpora of multiple languages in the gl
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/68415396313329030916
Autor:
Yu-Lin Chen, Wen-Kuan Yeh, Heng-Tung Hsu, Ke-Horng Chen, Der-Hsien Lien, Wen-Chin Lin, Tien-Han Yu, Yu-Sheng Chiu, D Godwinraj, D Godfrey, Chien-Hung Wu
Publikováno v:
Journal of Electronic Materials. 52:1391-1399
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5b4fdff46dd33ec18ca9ce220050de3
https://doi.org/10.1007/s11664-022-10087-x
https://doi.org/10.1007/s11664-022-10087-x
Autor:
Yu-Lin Chen, Wen-Kuan Yeh, Heng-Tung Hsu, Ke-Horng Chen, Wen-Chin Lin, Tien-Han Yu, Hung-Ting Chou, D Godwin Raj, D Godfrey
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:035007
Device degradation due to hot carrier injection (HCI) in multi-fin 20 nm and 10 nm N- and P-type FinFET devices are thoroughly analyzed. To further understand the HCI reliability of the four FinFET devices, the device is fabricated with a standard Vt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54e910ec93b11a4908c943bbaf2adea4
https://doi.org/10.1149/2162-8777/acc138
https://doi.org/10.1149/2162-8777/acc138
Autor:
Yu-Lin Chen, Wen-Kuan Yeh, Ke-Horng Chen, Heng-Tung Hsu, Chin-Tsai Hsu, D Godwin Raj, Hung-Ting Chou, Jui-Sheng Wu, Tien-Han Yu, D Godfrey
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:035001
Device degradation due to hot carrier injection (HCI) in different Y-gate HEMT devices is thoroughly analyzed. To further understand the HCI reliability of the Y-gate HEMT devices, the device is fabricated with AlGaN/GaN structure with different top
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b16447c9dd19ffc8bfe6ea91a5479552
https://doi.org/10.1149/2162-8777/acbe19
https://doi.org/10.1149/2162-8777/acbe19
Autor:
D. Godfrey, D. Nirmal, L. Arivazhagan, Brigis Roy, Yu-Lin Chen, Tien-Han Yu, Wen-Kuan Yeh, D. Godwinraj
Publikováno v:
2020 5th International Conference on Devices, Circuits and Systems (ICDCS).
Breakdown characteristic of GaN-HEMT with field plate (FP) technique is investigated. Source field plate length (LFP) is varied and its impact on breakdown voltage is studied. The investigation of GaN-HEMT is carried out using Technology Computer Aid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa9f4f0957ec1eb7ac04a22a86d23510
https://doi.org/10.1109/icdcs48716.2020.243589
https://doi.org/10.1109/icdcs48716.2020.243589
Publikováno v:
INTERSPEECH
This paper introduces a new recursive dialogue game framework for personalized computer-assisted language learning. A series of sub-dialogue trees are cascaded into a loop as the script for the game. At each dialogue turn there are a number of traini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c564c87f11bb262787acc5c225aa31f8
https://doi.org/10.21437/interspeech.2013-141
https://doi.org/10.21437/interspeech.2013-141
Publikováno v:
ICASSP
We propose a framework for computer-assisted language learning as a pedagogical dialogue game. The goal is to offer personalized learning sentences on-line for each individual learner considering the learner's learning status, in order to strike a ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ef29e94d404cb7f01abfc0e3945f291
https://doi.org/10.1109/icassp.2013.6639266
https://doi.org/10.1109/icassp.2013.6639266