Výsledky vyhledávání - "Tien Tung Luong"

Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD

Autor: Shane Chang, Tien Tung Luong, Yuen Yee Wong, Yen Teng Ho, Edward Yi Chang

Publikováno v: Microelectronics Reliability. 83:286-292

High crystalline quality AlGaN films were grown on GaN templates by metalorganic chemical vapor deposition (MOCVD). Inhomogeneous distributions of Al compositions in both the vertical and lateral growth direction caused by the strong gas-phase pre-re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::77c3a2c38a9eeefd2ba1ade8ac943408
https://doi.org/10.1016/j.microrel.2017.07.021

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Akademický článek

Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layers.

Autor: Shane Chang, Lin Lung Wei, Tien Tung Luong, Ching Chang, Li Chang

Publikováno v: Journal of Applied Physics; 2017, Vol. 122 Issue 10, p1-7, 7p, 2 Color Photographs, 5 Black and White Photographs, 1 Chart, 2 Graphs

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Akademický článek

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Electrical Properties of Compound 2D Semiconductor Mo1−xNbxS2

Autor: Yen Teng Ho, Tien Tung Luong, Yung-Ching Chu, Ming Zhang, Jason C. S. Woo, Peng Lu, Po-Yen Chien, Edward Yi Chang

Publikováno v: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

In order for TMD such as molybdenum disulfide (MoS 2 ) to be useful for semiconductor industry, a controllable doping process is required. MoS 2 with substitutional Nb shows a p-type behavior compared to the n-type characteristics of nominal films. I

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bed62ba225b2c39ce1c9643ea60071c5
https://doi.org/10.1109/icsict.2018.8564953

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2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments

Autor: Jer-shen Maa, Tzu Chun Yen, Lin Lung Wei, Ting Wei Wei, Yen Teng Ho, Tien Tung Luong, Yue Han Wu, Edward Yi Chang, Binh Tinh Tran

Publikováno v: Electronic Materials Letters. 11:352-359

The effects of surface pre-treatments and the role of an AlN buffer layer for 2H-SiC growth on c-plane sapphire substrates by thermal CVD are investigated. While the crystallinity of SiC directly grown on sapphire substrate always degrades with a hyd

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::513fa50722ab1ce8fa70dc9c2d50043b
https://doi.org/10.1007/s13391-015-4208-9

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Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation

Autor: Edward Yi Chang, Tien Tung Luong, Yu Sheng Chiu, Shih-Chien Liu, Yen Teng Ho, Minh Thien Huu Ha, Binh Tinh Tran, Yu Lin Hsiao

Publikováno v: Electronic Materials Letters. 11:217-224

An advanced AlGaN/GaN HEMT structure, grown on a sapphire substrate by MOCVD utilizing a high temperature (HT) AlN interlayer (IL) and a multilayer high-low-high temperature (HLH) AlN buffer layer, demonstrates a superior performance both in breakdow

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bdb91dff0fe80befa0fa0d0a563882fa
https://doi.org/10.1007/s13391-014-4219-y

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Layered MoS2 grown on c -sapphire by pulsed laser deposition

Autor: Tien Tung Luong, Chun Hao Ma, Wei Ting Hsu, Yung Yi Tu, Wen-Hao Chang, Yung Ching Chu, Lin Lung Wei, Tzu Chun Yen, Yen Teng Ho, Krishna Pande, Edward Yi Chang

Publikováno v: physica status solidi (RRL) - Rapid Research Letters. 9:187-191

Layered growth of molybdenum disulphide (MoS2) was successfully achieved by pulsed laser deposition (PLD) method on c -plane sapphire substrate. Growth of monolayer to a few monolayer MoS2, dependent on the pulsed number of excimer laser in PLD is de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19879b8a31720c7e45fb335effb2e11f
https://doi.org/10.1002/pssr.201409561

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Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors**

Autor: Yuen Yee Woong, Tien Tung Luong, Edward Yi Chang, Binh Tinh Tran, Yen Teng Ho

Publikováno v: Chemical Vapor Deposition. 21:33-40

The improvements in electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown using metal-organic (MO)CVD by engineering structure, barrier strain, and unintentional carbon incorporation, are demonstrated in this work.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::44901bd5e0281f3264d6b89cdc927be1
https://doi.org/10.1002/cvde.201407100

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