Zobrazeno 1 - 10
of 114
pro vyhledávání: '"Tien T. Le"'
Publikováno v:
IEEE Journal of Photovoltaics. :1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5414ae506c56235be7f3b02c0b4b1452
https://doi.org/10.1109/jphotov.2023.3261549
https://doi.org/10.1109/jphotov.2023.3261549
Autor:
Zhongshu Yang, Jan Krügener, Frank Feldmann, Jana-Isabelle Polzin, Bernd Steinhauser, Matvei Aleshin, Tien T. Le, Daniel Macdonald, AnYao Liu
Publikováno v:
Solar RRL. 7
In addition to excellent surface passivation and carrier selectivity, the structure based on the heavily doped polysilicon layer on an ultrathin silicon oxide interlayer also demonstrates strong impurity gettering effects. Herein, the gettering stren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14ccf59676bea0655310039e880d33b2
https://doi.org/10.1002/solr.202370081
https://doi.org/10.1002/solr.202370081
Publikováno v:
ACS Applied Energy Materials. 4:10849-10856
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d5ea4d369d82c1a88df1b048c6dea47
https://doi.org/10.1021/acsaem.1c01826
https://doi.org/10.1021/acsaem.1c01826
Autor:
Amir Abdallah, Stephane Armand, Bram Hoex, Anower Hossain, Yahya Zakaria, Sachin Surve, Parvathala Reddy Narangari, Teng Kho, Jingnan Tong, Kean T. Khoo, Tien T Le, Kean Chern Fong, Keith R. McIntosh, Marco Ernst, Wensheng Liang
Publikováno v:
ACS Applied Materials & Interfaces. 13:36426-36435
Thin SiOx interlayers are often formed naturally during the deposition of transition metal oxides on silicon surfaces due to interfacial reaction. The SiOx layer, often only several atomic layers thick, becomes the interface between the Si and deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eade7890fb1cca91ba9e31f3f10047ce
https://doi.org/10.1021/acsami.1c06765
https://doi.org/10.1021/acsami.1c06765
Autor:
Zhongshu Yang, Jan Krugener, Frank Feldmann, Jana-Isabelle Polzin, Bernd Steinhauser, Tien T. Le, Daniel MacDonald, AnYao Liu
Publikováno v:
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::073e132933a66b8281d5d65d018c3a47
https://doi.org/10.1109/pvsc48317.2022.9938705
https://doi.org/10.1109/pvsc48317.2022.9938705
Autor:
Jingnan, Tong, Tien T, Le, Wensheng, Liang, Md Anower, Hossain, Keith R, McIntosh, Parvathala, Narangari, Stephane, Armand, Teng C, Kho, Kean T, Khoo, Yahya, Zakaria, Amir A, Abdallah, Sachin, Surve, Marco, Ernst, Bram, Hoex, Kean Chern, Fong
Publikováno v:
ACS applied materialsinterfaces. 13(30)
Thin SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::182ffc7fbe6ab73d6588d7c53b15c176
https://pubmed.ncbi.nlm.nih.gov/34308641
https://pubmed.ncbi.nlm.nih.gov/34308641
Autor:
Zhongshu Yang, Jan Krügener, Frank Feldmann, Jana‐Isabelle Polzin, Bernd Steinhauser, Tien T. Le, Daniel Macdonald, AnYao Liu
Publikováno v:
Advanced Energy Materials. 12:2103773
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfab39d68b324b894b540a7a8914c4e5
https://doi.org/10.1002/aenm.202103773
https://doi.org/10.1002/aenm.202103773
Publikováno v:
Tetrahedron. 112:132713
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd695d7021fa009f95affe7db0e1e999
https://doi.org/10.1016/j.tet.2022.132713
https://doi.org/10.1016/j.tet.2022.132713
Publikováno v:
Differentiation. 102:40-52
Presenilins (Psen1 and Psen2 in mice) are polytopic transmembrane proteins that act in the γ-secretase complex to make intra-membrane cleavages of their substrates, including the well-studied Notch receptors. Such processing releases the Notch intra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::076657b0191cf54147457905c59cca93
https://doi.org/10.1016/j.diff.2018.07.003
https://doi.org/10.1016/j.diff.2018.07.003
Autor:
Sieu Pheng Phang, Thien N. Truong, Mike Tebyetekerwa, Mowafak Al-Jassim, Matthew Young, Hieu T. Nguyen, Tien T. Le, Daniel Macdonald, Josua Stuckelberger, Andres Cuevas, Di Yan
Publikováno v:
Solar RRL. 5:2170125
A doping technique for p-type poly-Si/SiOx passivating contacts using a spin-on method for different mixtures of Ga and B glass solutions is presented. Effects of solution mixing ratios on the contact performance (implied open circuit voltage iVoc, c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::021bc44353c7658632fbf801d7070a4b
https://doi.org/10.1002/solr.202170125
https://doi.org/10.1002/solr.202170125