Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Tien K Ng"'
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 2, Pp 1-10 (2020)
A prism-based self-injection locked seamlessly tunable blue InGaN/GaN laser diode composite cavity system is presented. A rigorous analysis of this external cavity diode laser (ECDL) system is performed at two different optical feedback powers. At 13
Externí odkaz:
https://doaj.org/article/ff74802967f54006a43800a9217a3281
Harvesting Electricity by Harnessing Nature: Bioelectricity, Triboelectricity, and Method of Storage
Publikováno v:
digital Encyclopedia of Applied Physics. :1-25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91baaac5b6407477bc8c3a82027399fc
https://doi.org/10.1002/3527600434.eap958
https://doi.org/10.1002/3527600434.eap958
Publikováno v:
digital Encyclopedia of Applied Physics. :1-21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce1bbf660598742d04cb142dbfd1a4a2
https://doi.org/10.1002/3527600434.eap939
https://doi.org/10.1002/3527600434.eap939
Autor:
Damián P. San-Román-Alerigi, Dalaver H. Anjum, Yaping Zhang, Xiaoming Yang, Ahmed Benslimane, Tien K. Ng, Mohamed N. Hedhili, Mohammad Alsunaidi, Boon S. Ooi
We investigate the effect of electron beam irradiation on the dielectric properties of As2S3 Chalcogenide glass. By means of low-loss Electron Energy Loss Spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb4389fd27ede0e30dc9d5906346ae2c
Publikováno v:
ECS Meeting Abstracts. :2144-2144
Optical fiber technology has already been established in the long-distance communications and now intervening the short-reach communications since the intra-rack and inter/intra-chip interconnects are struggling to satisfy the requirements of the exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e695b3665c1a86b2b27eccc70c53157
https://doi.org/10.1149/ma2014-02/46/2144
https://doi.org/10.1149/ma2014-02/46/2144
Publikováno v:
ECS Meeting Abstracts. :1545-1545
We report on photo electroless chemical (PEC) etching of III-Nitride material for thin layer lift-off for flexible solid-state light emitting devices. We investigate three different structures: 30 µm unintentionally doped GaN on sapphire, 30 µm n-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd4d1a037e4df3988586eb109dfc783
https://doi.org/10.1149/ma2014-01/41/1545
https://doi.org/10.1149/ma2014-01/41/1545
Publikováno v:
ECS Meeting Abstracts. :1477-1477
The reduction in the dimensionality of the active region and exploiting the quantum mechanical effects from this device design has lead to the realization of quantum well (Qwell), quantum wire and eventual quantum dot (Qdots semiconductor lasers with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::168338673301ca8f02b584db22737e60
https://doi.org/10.1149/ma2014-01/40/1477
https://doi.org/10.1149/ma2014-01/40/1477