Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Tien Jen Cheng"'
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
A novel copper electroplating and CMP process was developed to effectively modulate the within-wafer and within-die nanoscale topography. The feasibility of this new metallization is demonstrated on a 64nm pitch product with an equivalent defect leve
Autor:
Shafaat Ahmed, Ketan Shah, Craig Child, Stephan Grunow, Dinesh Koli, Anbu Selvam Km Mahalingam, Adam da Silva, Tien-Jen Cheng, Mukta Sharma, Teng-Yin Lin
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Electroplating for the sub-50 nm pitch back-end-of-line (BEOL) interconnect metallization has become increasingly challenging mostly because of marginal seed coverage, inadequate plating process and/or chemistry, the limitation of scaling the barrier
Autor:
Shafaat Ahmed, Paul Findeis, Connie Nga Troung, Tien Jen Cheng, Stephan Grunow, Ronald Rothkranz, Jennifer Oakley, Troy Graves-Abe
Publikováno v:
ECS Meeting Abstracts. :1900-1900
In the past few years the 3D IC integration (3DI) stacking has emerged as a potentially novel approach for extending computing performance without the high cost of CMOS scaling. The 3DI stacking technology is thought to be the essential technology of
Autor:
Shafaat Ahmed, Qiang Huang, Tien Jen Cheng, Paul Findeis, Dinesh R Koli, Connie Nga Troung, Stephan Grunow
Publikováno v:
ECS Meeting Abstracts. :1909-1909
A typical damascene copper plating is a multi-step process, including wafer entry, Cu nucleation, trench filling and thick overburden plating. During these steps, the most important parameters are found to be the entry bias voltage (Evolv), nucleatio
Autor:
Edward Engbrecht, Junjing Bao, Philip L. Flaitz, Stephen M. Gates, Son Nguyen, A. Simon, Jihong Choi, Shao Beng Law, Eden Zielinski, Hosadurga Shobha, Dimitri R. Kioussis, Wei-Tsu Tseng, R. G. Filippi, Anthony D. Lisi, T. Lee, Tien-Jen Cheng, Naftali E. Lustig, Kaushik Chanda, Alfred Grill, Jason Gill
Publikováno v:
2010 IEEE International Interconnect Technology Conference.
A multilevel back-end-of-line structure with a dielectric constant k ≤ 2.4 ultra low-k materials was developed. k=3D2.2 ULK build was demonstrated at a 144nm wiring pitch and a k=3D2.4 ULK was demonstrated at a 288nm pitch. Good model-to-hardware c
Autor:
Tien-Jen Cheng, 鄭添仁
91
This thesis is related to the design and implementation of a line-detection system. This system is based on the theory of Hough Transform and developed on a Linux-based platform for digital image processing. There are four major parts in such
This thesis is related to the design and implementation of a line-detection system. This system is based on the theory of Hough Transform and developed on a Linux-based platform for digital image processing. There are four major parts in such
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/31777206550187279438
Publikováno v:
Journal of The Electrochemical Society. 137:93-95
L'anisotropie magnetique d'une couche mince de cobalt deposee electrolytiquement sur un substrat poreux d'alumite peut etre modifiee en controlant le pH de la solution et la densite de courant
Autor:
Jacob Jorne, Tien-Jen Cheng
Publikováno v:
Chemical Engineering Science. 42:1635-1644
Average and local mass-transfer coefficients were measured by the limiting current technique during zinc electrodeposition from aqueous ZnSO4 solution under combined laminar natural and forced convection in a vertical flow channel. For assisting flow
Conference
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