Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Tien I. Bao"'
Autor:
Shau-Lin Shue, H.H. Lu, H. Y. Huang, H. C. Chen, T. H. Liu, B. L. Lin, Cheng-Hsiung Tsai, Shang-Yun Hou, Y. H. Wu, C. W Shih, M. H. Hsieh, K. F. Cheng, H. H. Lee, C. W. Lu, Lee Ming-Han, C. L. Teng, C.H. Yu, Tien-I Bao, Chung-Ju Lee
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
High stresses generated from chip-package interactions (CPI), especially when large die is flip mounted on organic substrate using Pb-free C4 bumps, can easily cause low-k delamination. A novel scheme by applying an elastic material can effectively r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22fd1243040b0637b7ee6889336f5ab3
https://doi.org/10.1109/iitc-mam.2015.7325587
https://doi.org/10.1109/iitc-mam.2015.7325587
Autor:
Shy-Jay Lin, Allen Carroll, Alan D. Brodie, Luca Grella, Tsung-Chih Chien, Burn Jeng Lin, Jaw-Jung Shin, Tien-I Bao, Shih-Chi Wang, Chih Wei Lu, Mark A. McCord
Publikováno v:
SPIE Proceedings.
KLA-Tencor is currently developing Reflective Electron Beam Lithography (REBL), targeted as a production worthy multiple electron beam tool for next generation high volume lithography. The Digital Pattern Generator (DPG) integrated with CMOS and MEMS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de5bd98a0c67f5afede178fb276ce613
https://doi.org/10.1117/12.2045416
https://doi.org/10.1117/12.2045416
Publikováno v:
Journal of Applied Physics. 78:3342-3347
The properties of a‐SiOx:H thin films deposited at low temperature (∼ 50 °C) in a low energy magnetron rf plasma system with Ar/SiH4/O2 gas mixtures are investigated. In the low pressure regime (about 5 mTorr reactive gases), the surface reactio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abf66d49b9979f6578db21ada784f5f5
https://doi.org/10.1063/1.360028
https://doi.org/10.1063/1.360028
Publikováno v:
Journal of Applied Physics. 78:489-493
The effect of the externally introduced rf magnetron plasma on the particle size distribution on films deposited by pulsed laser ablation is investigated. A cw low energy magnetron rf plasma is sustained between the target and the substrate during th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3aff304bfb1befcd230e4f387182e56
https://doi.org/10.1063/1.360632
https://doi.org/10.1063/1.360632
Autor:
Shau-Lin Shue, Chung-Ju Lee, Singh Sunil K, T. J. Tsai, Tien-I Bao, T. M. Huang, C.H. Yu, Y. S. Chang, C. W. Lu, Cheng-Hsiung Tsai, Hsin-Chieh Yao
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
This study evaluated plasma treatment processes on 193i and EUV photoresist to improve the line width roughness (LWR) performance in porous low-k/ultra-thin barrier Cu interconnect. We successfully demonstrated 20% LWR reduction for 193i PR and 11% f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::165e1f3e2c5b334f1338581d1a448cc8
https://doi.org/10.1109/iitc.2012.6251569
https://doi.org/10.1109/iitc.2012.6251569
Autor:
C.H. Yu, Shau-Lin Shue, Lee Ming-Han, Y. H. Wu, Chung-Ju Lee, H.H. Lu, Tien-I Bao, H. H. Lee, Cheng-Hsiung Tsai
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
A novel approach of copper CMP stop layer using uncured extreme low-K was demonstrated to improve the within-wafer Rs uniformity on Cu/extra low-k (XLK) interconnect. This CMP stop layer could be converted into a low dielectric constant film by remov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f4923a19211be4967525564959dd504
https://doi.org/10.1109/iitc.2012.6251567
https://doi.org/10.1109/iitc.2012.6251567
Autor:
Singh Sunil K, Y. S. Chang, T. J. Tsai, Cheng-Hsiung Tsai, C.H. Yu, T. M. Huang, Shau-Lin Shue, Chung-Ju Lee, Tien-I Bao, C. W. Lu
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
This research focus on low radical plasma etch (LRPE) process and its impact on highly porous dielectric material (extreme-low-k, ELK, k=2.4). We demonstrate a dual damascene (DD) process flow without k degration by low radical and pore sealing plasm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0990d7932ca7b6a8b39e6bd75fc246c
https://doi.org/10.1109/iitc.2011.5940313
https://doi.org/10.1109/iitc.2011.5940313
Publikováno v:
Semiconductor Science and Technology. 7:1123-1126
The I-V characteristics of SiOx films deposited in an RF magnetron system with low pressure ( approximately 6 mTorr) SiH4/O2/Ar gas mixtures have been studied. With the enhanced surface processes under the high flux, low energy ion bombardment, the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c11ff6d260d9230bc8567df78e0ff92d
https://doi.org/10.1088/0268-1242/7/8/018
https://doi.org/10.1088/0268-1242/7/8/018
Publikováno v:
Semiconductor Science and Technology. 5:795-798
A novel low-temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c5bc709e224016ce38228103e7da20f
https://doi.org/10.1088/0268-1242/5/7/028
https://doi.org/10.1088/0268-1242/5/7/028
Autor:
I. Lin, Tien I. Bao
Publikováno v:
Journal of Applied Physics. 78:6852-6854
The effect of the low energy (30 eV) Ar plasma on the property of the deposited ultra thin a‐SiOX:H (0≤X≤2) films is investigated by alternate deposition and post‐deposition Ar plasma treatment processes in a rf hollow oval magnetron system u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d58d9d3b3a2d697f4e4d038f562b44b6
https://doi.org/10.1063/1.360448
https://doi.org/10.1063/1.360448