Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Tien Huat Gan"'
Publikováno v:
Journal of the Chinese Institute of Engineers. 18:707-712
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7e84c1b3a8b5f4aa90310a912daa1bd
https://doi.org/10.1080/02533839.1995.9677735
https://doi.org/10.1080/02533839.1995.9677735
Publikováno v:
International Electron Devices and Materials Symposium.
In/sub 0.52/Al/sub0.48/As/In/sub 0.53/Ga/sub 0.47/As high electron mobility transistor(HEMT) layer structure were grown by a Riber-32P MBE system on [100] InP:Fe substrates. Devices with 0.8 /spl mu/m gate-length demonstrated a peak extrinsic transco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43bef927d1cd22520aa17082cb7aecb5
https://doi.org/10.1109/edms.1994.863844
https://doi.org/10.1109/edms.1994.863844
Publikováno v:
International Electron Devices and Materials Symposium.
Characteristics of WNx films, deposited by a RF sputter, were evaluated through high temperature heat treatment. WNx films present themselves as a thermally stable material, which is suitable for gate material used in ion-implanted metal-semiconducto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41944e44f08542ec24342220c1b09a39
https://doi.org/10.1109/edms.1994.771264
https://doi.org/10.1109/edms.1994.771264
Publikováno v:
International Electron Devices and Materials Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::216b2babee54a72ec679d85e85e249e3
https://doi.org/10.1109/edms.1994.863810
https://doi.org/10.1109/edms.1994.863810
Publikováno v:
Seventh International Conference on Indium Phosphide and Related Materials.
In this report, we try to improve the quality of the In/sub 0.52/Al/sub 0.48/As layer, by substituting 10% of Al atoms with Ga atoms, and forming a In/sub 0.52/(Al/sub 0.9/Ga/sub 0.1/)/sub 0.48/As quaternary (Q) layer. This quaternary InAlGaAs layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22f0463a152e463ce1433757f5e5ad6f
https://doi.org/10.1109/iciprm.1995.522167
https://doi.org/10.1109/iciprm.1995.522167
Publikováno v:
Seventh International Conference on Indium Phosphide & Related Materials; 1995, p412-415, 4p
Publikováno v:
Journal of the Chinese Institute of Engineers; July 1995, Vol. 18 Issue: 5 p707-712, 6p
Akademický článek
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Publikováno v:
International Electron Devices & Materials Symposium; 1994, p11-11, 1p
Publikováno v:
International Electron Devices & Materials Symposium; 1994, p7-7, 1p