Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Tien−Fu Lei"'
Autor:
Joe Ko, Jung−Chun Lin, Heng−Sheng Haung, Ze−Wei Jhou, Hung-Wen Chen, Sam Chou, Hung−Chuan Lin, Shuang-Yuan Chen, Tien−Fu Lei
Publikováno v:
Japanese Journal of Applied Physics. 45:3266-3271
In this paper, the impact of hot carrier stress on the mismatch properties of n and p metal–oxide–semiconductor (MOS) field-effect transistors (FETs) with different sizes produced using 0.15 µm complementary MOS (CMOS) technology is presented fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c52255ea2825239a2b1c3e68c5bb99ef
https://doi.org/10.1143/jjap.45.3266
https://doi.org/10.1143/jjap.45.3266
Autor:
Tien−Fu Lei, Joe Ko, Hung-Wen Chen, Jung−Chun Lin, Hung−Chuan Lin, Heng−Sheng Haung, Sam Chou, Ze−Wei Jhou, Shuang-Yuan Chen
Publikováno v:
Japanese Journal of Applied Physics. 45:3144-3146
In this study, n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs) having 20 and 32 A gate oxide thicknesses of 0.13 µm technology were used to investigate DC hot-carrier reliability at elevated temperatures up to 125 °C. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d4b7e17eb517db7ed61f8b03faff49f
https://doi.org/10.1143/jjap.45.3144
https://doi.org/10.1143/jjap.45.3144
Publikováno v:
Japanese Journal of Applied Physics. 24:883
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47da0368c0facc87eceb43a527b12602
https://doi.org/10.1143/jjap.24.883
https://doi.org/10.1143/jjap.24.883