Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Tieh-Chiang Wu"'
Autor:
Chao-Sung Lai, Jian-Shing Luo, Chen-Kang Wei, Hsiu-Pin Chen, Chia-Ming Yang, Tieh-Chiang Wu, Yu Jing Chang
Publikováno v:
IEEE Transactions on Nanotechnology. 16:999-1003
Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) are used to investigate the doping profile of saddle-fin (S-fin) devices in a 30-nm dynamic-random-access-memory (DRAM) technology. Due to the limited resolutio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80fdb05b411428404ffe64629845fbfa
https://doi.org/10.1109/tnano.2017.2738667
https://doi.org/10.1109/tnano.2017.2738667
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:685-687
The row hammer effect has become a reliability issue that cannot be ignored in sub-30-nm dynamic random-access memory (DRAM) products because of the narrow isolation spacing between the array devices. Improving the row hammer effect via fabrication p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c1bfd0a4ecc2f16b55fdf36ff2925f5
https://doi.org/10.1109/tdmr.2016.2607174
https://doi.org/10.1109/tdmr.2016.2607174
Publikováno v:
IEEE Transactions on Electron Devices. 50:1036-1041
A negative wordline bias scheme is utilized to reduce the subthreshold leakage of deep submicron DRAM cell transistors. With excessive negative wordline bias, gate-induced drain leakage (GIDL) could dominate cell leakage and degrade product retention
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7415a0cb18b3631669b67a35ff9e226e
https://doi.org/10.1109/ted.2003.812498
https://doi.org/10.1109/ted.2003.812498
Autor:
Minchen Chang, Jengping Lin, Shih, Steven N., Tieh-Chiang Wu, Huang, Brady, Jen Yang, Pei-Ing Lee
Publikováno v:
IEEE Transactions on Electron Devices; Apr2003, Vol. 50 Issue 4, p1036, 6p, 7 Black and White Photographs, 3 Diagrams, 1 Chart, 10 Graphs