Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Tie-yu Lü"'
Autor:
Shuo Lin, Baoping Zhang, Tie-Yu Lü, Jin-Cheng Zheng, Huaqing Pan, Huanting Chen, Chuanjin Lin, Xirong Li, Jinrong Zhou
Publikováno v:
ACS Omega, Vol 6, Iss 40, Pp 26689-26698 (2021)
Externí odkaz:
https://doaj.org/article/c981fc3692a645488dbfd7b70740eb73
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Abstract New crystal structures of fully hydrogenated borophene (borophane) have been predicted by first principles calculation. Comparing with the chair-like borophane (C-boropane) that has been reported in literature, we obtained four new borophane
Externí odkaz:
https://doaj.org/article/2c87e6983cdc49c7b45883465ef320cf
Publikováno v:
Physical Review Materials. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf5d962c81054743ba185e7f4271c2e6
https://doi.org/10.1103/physrevmaterials.6.103802
https://doi.org/10.1103/physrevmaterials.6.103802
Autor:
Jinrong Zhou, Tie-Yu Lü, Baoping Zhang, Chuanjin Lin, Xirong Li, Jin-Cheng Zheng, Huanting Chen, Shuo Lin, Huaqing Pan
Publikováno v:
ACS Omega, Vol 6, Iss 40, Pp 26689-26698 (2021)
ACS Omega
ACS Omega
B-γ-CsSnI3 perovskite solar cells (PSCs) are simulated employing diverse electron-transporting layers (ETLs, including TiO2, ZnO, SnO2, GaN, C60, and PCBM), and a comparative study has been made. Both regular and inverted planar structures are simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84363b87d1663c378a332e75ebe4cf2e
https://doaj.org/article/c981fc3692a645488dbfd7b70740eb73
https://doaj.org/article/c981fc3692a645488dbfd7b70740eb73
Publikováno v:
The Journal of Physical Chemistry C. 125:14583-14589
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43fc409253bac9526c43420aba3f876a
https://doi.org/10.1021/acs.jpcc.1c04367
https://doi.org/10.1021/acs.jpcc.1c04367
Publikováno v:
Journal of Physics D: Applied Physics. 56:345304
Room-temperature ferromagnetic (FM) half-metallic materials are essential for spintronics applications. Here, we find that (C, Mn) co-doped orthorhombic ZnO (termed (C, Mn) @Orth-ZnO) is a room-temperature FM half-metal with a magnetic moment of 3μ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b5d884b80e519bdf1293c5525d14a3f
https://doi.org/10.1088/1361-6463/accfa5
https://doi.org/10.1088/1361-6463/accfa5
Autor:
Lijin Zhan, Yimei Fang, Ruotong Zhang, Xiancong Lu, Tie-yu Lü, Xinrui Cao, Zizhong Zhu, Shunqing Wu
Publikováno v:
Physical chemistry chemical physics : PCCP. 24(25)
Pristine tPenta silicene, which is named for its tilted pentagonal motifs, and its isoelectronic substitutions, Si0.333Ge0.667 and Si0.333Sn0.667, are identified as quantum spin Hall insulators with dissipationless edge states desired for high-speed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b666d39e4248383d058d5c125c26dc68
https://pubmed.ncbi.nlm.nih.gov/35612307
https://pubmed.ncbi.nlm.nih.gov/35612307
Publikováno v:
ACS Nano. 14:15806-15815
Structural engineering techniques such as local strain engineering and folding provide functional control over critical optoelectronic properties of 2D materials. Local strain engineering at the nanoscale level is practically achieved via permanently
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::239ab907d2f40fad3658e1d213209ddc
https://doi.org/10.1021/acsnano.0c06901
https://doi.org/10.1021/acsnano.0c06901
Autor:
Ruotong Zhang, Fulun Wu, Tie-Yu Lü, Yimei Fang, Xinrui Cao, Yinghui Zhou, Zi-Zhong Zhu, Shunqing Wu
Publikováno v:
Physica B: Condensed Matter. 652:414645
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7a1ea493696e61f0a44814e4b441fd8
https://doi.org/10.1016/j.physb.2023.414645
https://doi.org/10.1016/j.physb.2023.414645
Publikováno v:
AIP Advances, Vol 5, Iss 9, Pp 097204-097204-8 (2015)
We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type) semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the ther
Externí odkaz:
https://doaj.org/article/05fa7f40ac0f4dec970ab49a5be46f74