Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Tiberj, Antoine"'
Autor:
Tiberj, Antoine, Rubio-Roy, Miguel, Paillet, Matthieu, Huntzinger, Jean-Roch, Landois, Périne, Mikolasek, Mirko, Contreras, Sylvie, Sauvajol, Jean-Louis, Dujardin, Erik, Zahab, Ahmed-Azmi
The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of graphene exf
Externí odkaz:
http://arxiv.org/abs/1304.4418
Akademický článek
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Autor:
Li, Ji, Zhang, Yuan, Liu, Chao, Zheng, Lirong, Petit, Eddy, Qi, Kun, Zhang, Yang, Wu, Huali, Wang, Wensen, Tiberj, Antoine, Wang, Xuechuan, Chhowalla, Manish, Lajaunie, Luc, Yu, Ruohan, Voiry, Damien
Publikováno v:
Advanced Functional Materials; 5/2/2022, Vol. 32 Issue 18, p1-11, 11p
Autor:
Caboni Alessandra, Godignon Philipe, Camara Nicolas, Jouault Benoit, Jabakhanji Bilal, Tiberj Antoine, Consejo Christophe, Camassel Jean
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 141 (2011)
Abstract Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence
Externí odkaz:
https://doaj.org/article/50d60185e734473eb7975041f890860f
Autor:
Hiebel Fanny, Mahmood Ather, Mallet Pierre, Naud Cecile, Veuillen Jean-Yves, Tiberj Antoine, Huntzinger Jean-Roch, Camassel Jean
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 171 (2011)
Abstract In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultrahigh vacuum (UHV) conditions is presented. At 100-μm scale, the authors show that the UHV growth yields few layer graphene (FLG) with an av
Externí odkaz:
https://doaj.org/article/4f95672891c345bba7d713837c0f7097
Publikováno v:
Epigraphic Workshop on the Science and Applications of Epitaxial Graphene on SiC
Epigraphic Workshop on the Science and Applications of Epitaxial Graphene on SiC, Dec 2012, Catania, Italy
Epigraphic Workshop on the Science and Applications of Epitaxial Graphene on SiC, Dec 2012, Catania, Italy
International audience; A detailed comparison of true epitaxial graphene monolayers grown on both faces of 6H SiC substrates (Si and C faces) is made by combining micro-Raman spectroscopy with transmission measurements. We have already shown that suc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::28f28588cad02cf43f6fbef7906193db
https://hal.archives-ouvertes.fr/hal-00803575
https://hal.archives-ouvertes.fr/hal-00803575
Publikováno v:
Nanoscience and Nanotechnology Letters
Nanoscience and Nanotechnology Letters, 2011, 3, pp.49-54. ⟨10.1166/nnl.2011.1118⟩
Nanoscience and Nanotechnology Letters, 2011, 3, pp.49-54. ⟨10.1166/nnl.2011.1118⟩
We review the results of growing few layer graphene on alpha-SiC with different surface orientations. To this end we have used successively a pure {000-1} C face, a 8 degrees-off one, a nonpolar {11-20} surface and, finally, a 8 degrees-off Si face a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::bbc70faab07f82d1ef3a26545d3237ba
https://hal.archives-ouvertes.fr/hal-00666151
https://hal.archives-ouvertes.fr/hal-00666151
Autor:
Sonde, S., Giannazzo, F., Raineri, V., Yakimova, R., Huntzinger, Jean-Roch, Tiberj, Antoine, Camassel, Jean
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2009, 80, pp.241406. ⟨10.1103/PhysRevB.80.241406⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2009, 80, pp.241406. ⟨10.1103/PhysRevB.80.241406⟩
The current transport across the graphene/4H-SiC interface has been investigated with nanometric lateral resolution by scanning current spectroscopy on both epitaxial graphene (EG) grown on (0001) 4H-SiC and graphene exfoliated from highly oriented p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b8514929068429a4fd9c68becff9a3d7
https://hal.archives-ouvertes.fr/hal-00543845
https://hal.archives-ouvertes.fr/hal-00543845
Autor:
Camara, Nicolas, Rius, G., Huntzinger, Jean Roch, Tiberj, Antoine, Mestres, N., Pérez Murano, F., Godignon, Philippe, Camassel, Jean
Publikováno v:
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09)
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9a24e6bec1b0cc855416281481d6c5b1
https://hal.archives-ouvertes.fr/hal-00390794
https://hal.archives-ouvertes.fr/hal-00390794
Akademický článek
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