Zobrazeno 1 - 1
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pro vyhledávání: '"Tianxu Duan"'
Autor:
Xinxing Ban, Tianxu Duan, Zhuangzhi Tian, Yunhe Li, Jianhui Zhu, Ningchang Wang, Shaoxing Han, Hui Qiu, Zhengxin Li
Publikováno v:
Semiconductor Science and Technology.
Ultra-smooth and low-damage processing of single-crystalline 4H-SiC has become a research focus as a substrate for third-generation semiconductor wafers. However, the high hardness and strong chemical inertia significantly affect 4H-SiC chemical-mech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc08bc70ca8f5444da410aa26073aee9
https://doi.org/10.1088/1361-6641/acd9e5
https://doi.org/10.1088/1361-6641/acd9e5
